TN2540N3-G Supertex, TN2540N3-G Datasheet - Page 4

• Manufacturer Part Number: TN2540N3-G
• Description: MOSFET Small Signal 400V 12Ohm
• Manufacturer: Supertex
• Type: Power MOSFETr

Specifications of TN2540N3-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 12 Ohm @ 10 V
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.175 A
• Power Dissipation: 740 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 12Ohm
• Drain-source On-volt: 400V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
200
150
100
1.1
1.0
0.9
1.5
1.2
0.9
0.6
0.3
50
0
-50
0
0
Capacitance vs. Drain-to-Source Voltage
C
RSS
BV
V
f = 1MHz
DS
DSS
2
Transfer Characteristics
10
0
= 25V
Variation with Temperature
V
V
GS
4
DS
T
(volts)
j
50
2 0
° (
(volts)
C)
●
6
1235 Bordeaux Drive, Sunnyvale, CA 94089
100
30
8
(cont.)
C
ISS
150
10
40
4
1.4
1.2
1.0
0.8
0.6
50
40
30
20
10
10
0
8
6
4
2
0
-50
0
0
V
●
(th)
Gate Drive Dynamic Characteristics
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V
On-Resistance vs. Drain Current
(th)
and R
95pF
@ 1mA
0.4
0.4
0
V
DS
Q (nanocoulombs)
GS
G
I
Variation with Temperature
D
0.8
0.8
= 4.5V
(amperes)
T
V
R
j
50
GS
° (
DS(ON)
C)
V
●
1.2
DS
= 10V
1.2
260 pF
@ 10V, 0.5A
www.supertex.com
= 10V
V
100
DS
1.6
1.6
= 40V
2.0
150
2.0
2.5
2.0
1.5
1.0
0.5
0
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