ZVP2106A Diodes Inc, ZVP2106A Datasheet - Page 2

• Manufacturer Part Number: ZVP2106A
• Description: MOSFET Small Signal P-Chnl 60V
• Manufacturer: Diodes Inc

Specifications of ZVP2106A

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.28 A
• Power Dissipation: 700 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: E-Line
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ZVP2106A
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
-10
10
-8
-4
-6
-2
0
5
1
0
-0.1
0
Voltage Saturation Characteristics
0
On-resistance v drain current
V
V
GS-
DS
-10
Output Characteristics
-2
-18V
V
-20V
Gate Source Voltage (Volts)
- Drain Source Voltage (Volts)
GS=
I
D
-Drain Current (Amps)
V
-14V
GS
=-5V
-20
-4
-12V
-10V
TYPICAL CHARACTERISTICS
-6V
-9V
-30
-6
-8V
-7V
-7V
-1.0
-40
-8
-8V
-6V
-9V
-10V
-5V
-10
-50
-2.0
-0.5A
-4V
I
-1A
-0.25A
D=
3-418
Normalised R
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-1.6
-1.8
-0.8
-2.0
-1.4
-1.2
-1.0
-0.4
-0.6
-0.2
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0
0
0
-40 -20
Saturation Characteristics
V
DS
Transfer Characteristics
- Drain Source Voltage (Volts)
V
-2
GS-
-2
DS(on)
T
0 20 40 60 80
Gate Source Voltage (Volts)
j
-Junction Temperature (°C)
and V
-4
-4
V
DS=
-10V
GS(th)
-6
-6
100
vs Temperature
120
-8
140 160
V
-8
I
GS=
D=-
V
I
D=
GS=
0.5A
-10V
-1mA
V
DS
180
-10
-10
-10V
V
-7V
-3.5V
-6V
-5V
-9V
-8V
-4V
GS
=