DN3145N8-G Supertex, DN3145N8-G Datasheet

DN3145N8-G

Manufacturer Part Number

DN3145N8-G

Description

MOSFET Small Signal 450V 60Ohm

Manufacturer

Supertex

Datasheet

1.DN3145N8-G.pdf (3 pages)

Specifications of DN3145N8-G

Minimum Operating Temperature

- 55 C

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

60 Ohm @ 0 V

Drain-source Breakdown Voltage

450 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

0.1 A

Power Dissipation

1300 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

SOT-89

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Features

►

Applications

►

-G indicates package is RoHS compliant (‘Green’)

Absolute Maximum Ratings

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

* Distance of 1.6mm from case for 10 seconds.

Ordering Information

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage

temperature

Soldering temperature*

DN3145

High input impedance

Low input capacitance

Fast switching speeds

Low on-resistance

Free from secondary breakdown

Low input and output leakage

Normally-on switches

Solid state relays

Converters

Constant current sources

Power supply circuits

Telecom

Device

TO-243AA (SOT-89)

Package Option

DN3145N8-G

●

1235 Bordeaux Drive, Sunnyvale, CA 94089

N-Channel Depletion-Mode

Vertical DMOS FETs

-55

C to +150

DSX

300

450

Value

(V)

±20V

/BV

DGX

DSX

DGX

General Description

The Supertex DN3145 is a depletion-mode (normally-on)

transistor utilizing an advanced vertical DMOS structure and

Supertex’s well-proven silicon-gate manufacturing process.

This combination produces a device with the power handling

capabilities of bipolar transistors and with the high input

impedance and positive temperature coefﬁcient inherent

in MOS devices. Characteristic of all MOS structures, this

device is free from thermal runaway and thermally-induced

secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

high breakdown voltage, high input impedance, low input

capacitance, and fast switching speeds are desired.

Pin Conﬁguration

Product Marking

(max)

DS(ON)

(Ω)

DN1MW

●

Tel: 408-222-8888

TO-243AA (SOT-89) (N8)

(min)

(mA)

120

DRAIN

DSS

W = Code for week sealed

GATE

●

DRAIN

www.supertex.com

= “Green” Packaging

SOURCE

DN3145

Related parts for DN3145N8-G

DN3145N8-G Summary of contents

Page 1

... Constant current sources ► Power supply circuits ► Telecom Ordering Information Package Option Device TO-243AA (SOT-89) DN3145 DN3145N8-G -G indicates package is RoHS compliant (‘Green’) Absolute Maximum Ratings Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating and storage temperature Soldering temperature* Absolute Maximum Ratings are those values beyond which damage to the device may occur ...

Page 2

... I = 100mA 100mA mmho V = 10V 100mA DS D 120 V = -5.0V 25V 1.0MHz 25V 100mA 25Ω, GEN 35 1 -5.0V -5.0V PULSE GENERATOR R GEN INPUT ● Tel: 408-222-8888 ● www.supertex.com DN3145 I † DRM (mA) 300 = 100µ -5. 125 15V = 100mA = 100mA OUTPUT D.U.T. ...

Page 3

... Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship ...

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