ZVN4306AV Diodes Inc, ZVN4306AV Datasheet - Page 2

• Manufacturer Part Number: ZVN4306AV
• Description: MOSFET Small Signal Avalanche
• Manufacturer: Diodes Inc

Specifications of ZVN4306AV

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.33 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.1 A
• Power Dissipation: 1130 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: E-Line
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2%
(2) Sample test.
(3) Switching times measured with 50
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source
Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage
Drain Current
On-State Drain
Current(1)
Static Drain-Source
On-State Resistance
(1)
Forward
Transconductance
(1)(2)
Input Capacitance (2)
Common Source
Output Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time
(2)(3)
Rise Time (2)(3)
Turn-Off Delay Time
(2)(3)
Fall Time (2)(3)
ZVN4306AV
SYMBOL MIN.
BV
V
I
I
I
R
g
C
C
C
t
t
t
t
GSS
DSS
D(on)
d(on)
r
d(off)
f
fs
GS(th)
DS(on)
iss
oss
rss
DSS
60
1.3
12
700
source impedance and <5ns rise time on a pulse generator
TYP.
0.22
0.32
amb
= 25°C unless otherwise stated).
MAX. UNIT CONDITIONS.
3
100
10
100
0.33
0.45
350
140
30
8
25
30
16
V
V
nA
A
mS
pF
pF
pF
ns
ns
ns
ns
A
A
I
I
V
V
V
V
V
V
V
V
V
D
D
GS
DS
DS
DS
GS
GS
DS
DS
DD
=1mA, V
=1mA, V
= 20V, V
=60V, V
=48V, V
=10V, V
=10V,I
=5V, I
=25V,I
=25 V, V
25V, V
D
D
D
GS
DS
=1.5A
=3A
=3A
GS
GS
GS
GEN
GS
= V
=0V
DS
=0
=0V, T=125°C
=10V
=0V, f=1MHz
=10V, I
=0V
GS
D
=3A
(2)