VP2206N3-G Supertex, VP2206N3-G Datasheet - Page 3

• Manufacturer Part Number: VP2206N3-G
• Description: MOSFET Small Signal 60V 0.9Ohm
• Manufacturer: Supertex
• Type: Power MOSFETr

Specifications of VP2206N3-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.9 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.64 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.9Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
-0.01
-1.0
-0.1
-10
-10
Supertex inc.
-8
-6
-4
-2
-0
2
1
0
-1
0
0
TO-92 (pulsed)
TO-39 (pulsed)
TO-92 (DC)
T C = 25°C
TO-39 (DC)
V
Maximum Rated Safe Operating Area
Transconductance vs. Drain Current
DS
= -25V
-10
Output Characteristics
-10
I
T
D
V
-20
V
A
(amperes)
DS
= 25
DS
(volts)
(volts)
-5
O
C
●
-30
-100
1235 Bordeaux Drive, Sunnyvale, CA 94089
V
GS
-8V
-6V
-4V
-3V
= -10V
T
T
A
A
-40
= -55
= 125
O
O
C
C
-1000
-10
-50
3
-10
1.0
0.8
0.6
0.4
0.2
10
-8
-6
-4
-2
-0
8
6
4
2
0
0
0.001
0
0
Power Dissipation vs. Case Temperature
TO-39
TO-92
●
Thermal Response Characteristics
Tel: [phone]
25
-2
Saturation Characteristics
0.01
50
TO-39
P
T
t
-4
P
V
C
D
(seconds)
DS
T
= 25
= 6.0W
C
(volts)
75
0.1
(
O
O
C)
●
C
-6
www.supertex.com
100
V
GS
= -10V
TO-92
P
T
1
C
D
-8
= 25
= 1.0W
125
-6V
-8V
-4V
-3V
O
C
-10
150
10
VP2206