ZVNL120A Diodes Inc, ZVNL120A Datasheet - Page 2

• Manufacturer Part Number: ZVNL120A
• Description: MOSFET Small Signal N-Chnl 200V
• Manufacturer: Diodes Inc

Specifications of ZVNL120A

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10 Ohm @ 5 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.18 A
• Power Dissipation: 700 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: E-Line
• Continuous Drain Current Id: 180mA
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 10ohm
• Rds(on) Test Voltage Vgs: 5V
• Power Dissipation Pd: 700mW
• No. Of Pins: 3
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ZVNL120A
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0
0
500
400
100
300
200
0
Transconductance v drain current
5
1
V
0
DS
Transfer Characteristics
Output Characteristics
V
2
0.2 0.4 0.6 0.8 1.0
10
- Drain Source Voltage (Volts)
GS-
Gate Source Voltage (Volts)
15
3
I
D
V
- Drain Current (Amps)
DS=
20
4
25V
TYPICAL CHARACTERISTICS
25
5
30
6
1.2 1.4 1.6 1.8 2.0
7
35
8
40
V
10V
8V
6V
5V
GS
=
45
9
10
50
3V
2V
20V
10V
V
40V
4V
DS=
3-402
500
400
300
200
100
Transconductance v gate-source voltage
100
1.0
0.8
0.6
0.4
0.2
80
60
Capacitance v drain-source voltage
0
40
20
0
0
0
V
Saturation Characteristics
1
DS
V
GS-
V
- Drain Source Voltage (Volts)
DS
2
10
Gate Source Voltage (Volts)
2
-Drain Source Voltage (Volts)
3
4
20
4
5
V
DS=
6
30
6
25V
7
8
8
40
9
10
10
50
10V
3V
2V
V
C
8V
6V
C
4V
C
GS
iss
oss
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=