ZXMN3A14FTA Diodes Inc, ZXMN3A14FTA Datasheet
首页 Integrated Circuits (ICs) MOSFET Small Signal ZXMN3A14FTA
Manufacturer Part Number
ZXMN3A14FTA
Description
MOSFET Small Signal N Channel
Specifications of ZXMN3A14FTA
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.065 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.9 A
Power Dissipation
1600 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Manufacturer:
ZETEX/DIODES
Part Number:
ZXMN3A14FTA /314
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
•
•
•
•
•
APPLICATIONS
•
•
•
•
ORDERING INFORMATION
DEVICE MARKING
•
ISSUE 1 - OCTOBER 2005
V
DEVICE
ZXMN3A14FTA
ZXMN3A14FTC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23 package
DC-DC Converters
Power Management functions
Disconnect switches
Motor control
314
=30V : R
DS
REEL
SIZE
(
13”
7”
on
)=0.065 ; I
WIDTH
TAPE
8mm
8mm
D
=3.9A
10000 units
QUANTITY
3000 units
PER REEL
1
ZXMN3A14F
S E M I C O N D U C T O R S
PINOUT
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ZXMN3A14FTA Summary of contents
... APPLICATIONS • DC-DC Converters • Power Management functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL TAPE SIZE WIDTH ZXMN3A14FTA 7” 8mm ZXMN3A14FTC 13” 8mm DEVICE MARKING • 314 ISSUE 1 - OCTOBER 2005 =3.9A D QUANTITY PER REEL 3000 units 10000 units ...
ZXMN3A14F ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ (c) Pulsed Drain Current Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (a) Power Dissipation at T ...
ISSUE 1 - OCTOBER 2005 CHARACTERISTICS 3 ZXMN3A14F ...
ZXMN3A14F ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State (1) Resistance (1) (3) Forward Transconductance (3) DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance (2) (3) ...
ISSUE 1 - OCTOBER 2005 TYPICAL CHARACTERISTICS 5 ZXMN3A14F ...
ZXMN3A14F TYPICAL CHARACTERISTICS 6 ISSUE 1 - OCTOBER 2005 ...
PACKAGE OUTLINE Controlling dimensions are in millimetres. Approximate conversions are given in inches PACKAGE DIMENSIONS MILLIMETRES DIM MIN MAX A 2.67 3.05 B 1.20 1.40 C 1.10 D 0.37 0.53 F 0.085 0.15 G 1.90 NOM © Zetex Semiconductors plc ...
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