TP0620N3-G Supertex, TP0620N3-G Datasheet - Page 4

• Manufacturer Part Number: TP0620N3-G
• Description: MOSFET Small Signal 200V 12Ohm
• Manufacturer: Supertex

Specifications of TP0620N3-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 12 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.175 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
1.15
1.05
0.95
-2.0
-1.0
200
150
100
1.1
1.0
0.9
50
0
0
-50
0
0
Capacitance vs. Drain-to-Source Voltage
BV
V
DS
DSS
-2
Transfer Characteristics
-10
= -25V
0
Variation with Temperature
V
GS
V
-4
DS
T
(volts)
j
-20
50
(volts)
(°
-6
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
100
-30
f = 1MHz
-8
C
(cont.)
C
ISS
RSS
150
-10
-40
4
1.2
1.1
1.0
0.9
0.8
0.7
-10
20
16
12
-8
-6
-4
-2
8
4
0
0
-50
0
0
V
(th)
●
Gate Drive Dynamic Characteristics
On-Resistance vs. Drain Current
65 pF
and R
Tel: [phone]
-0.2
0.5
V
0
(th)
V
Q
DS
GS
G
@ -1mA
Variation with Temperature
D
(nanocoulombs)
= -5V
V
-0.4
170 pF
1.0
(amperes)
DS
T
= -10V
j
50
(°C)
V
-0.6
1.5
●
DS
V
GS
www.supertex.com
= -40V
R
-10V, -0.2A
= -10V
DS(ON)
100
-0.8
2.0
@
-1.0
150
2.5
1.66
1.33
1.0
0.66
0.33
0
0
TP0620