SI7948DP-T1-E3 Vishay, SI7948DP-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI7948DP-T1-E3
• Description: MOSFET Small Signal 60V 4.6A 0.075Ohm
• Manufacturer: Vishay

Specifications of SI7948DP-T1-E3

• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.075 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A
• Power Dissipation: 1400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72403
S09-0268-Rev. C, 16-Feb-09
0.12
0.10
0.08
0.06
0.04
0.02
0.00
40
10
20
16
12
1
8
4
0
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
= 15 A
0.2
On-Resistance vs. Drain Current
= 30 V
4
3
V
SD
Q
V
g
- Source-to-Drain V oltage (V)
GS
I
0.4
D
T
- Total Gate Charge (nC)
8
J
= 4.5 V
- Drain Current (A)
Gate Charge
= 150 °C
6
0.6
12
9
0.8
16
V
GS
T
J
= 10 V
1 2
= 25 °C
1.0
20
New Product
1.2
15
24
0.200
0.175
0.150
0.125
0.100
0.075
0.050
0.025
0.000
800
700
600
500
400
300
200
100
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
= 10 A
= 10 V
4
2
T
V
0
V
J
C
DS
GS
C
- Junction T emperature ( °C)
rss
oss
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
2 5
Capacitance
8
4
C
5 0
iss
Vishay Siliconix
I
D
= 4.6 A
12
7 5
6
Si7948DP
100
www.vishay.com
16
8
125
150
20
10
3