VN2450N3-G Supertex, VN2450N3-G Datasheet - Page 4

• Manufacturer Part Number: VN2450N3-G
• Description: MOSFET Small Signal 500V 13Ohm
• Manufacturer: Supertex

Specifications of VN2450N3-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.2 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
300
225
150
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.2
1.1
1.0
0.9
0.8
75
-50
0
0
0
Capacitance vs. Drain-to-Source Voltage
V DS = 25V
C RSS
BV
1
DSS
Transfer Characteristics
10
0
Variation with Temperature
C OSS
C ISS
2
V
DS
T
V
T A = 25
J
GS (volts)
(volts)
20
50
(
O
3
C)
●
O
T A = -55
C
1235 Bordeaux Drive, Sunnyvale, CA 94089
f = 1MHz
4
100
30
T A = 125
O
C
(cont.)
5
O
C
150
40
6
4
1.35
1.05
0.75
10
1.5
1.2
0.9
0.6
30
25
20
15
10
8
6
4
2
0
5
0
-50
0
0
V
●
I D = 0.5A
V GS(th) @ 1mA
(th)
Gate Drive Dynamic Characteristics
-25
On-Resistance vs. Drain Current
Tel: [phone]
and R
0.3
1.0
0
DS
Q
G
Variation with Temperature
25
(nanocoulombs)
I
0.6
D
(amperes)
T
VGS = 4.5V
V DS =10V
J
2.0
50
(
O
R DS(on) @ 10V, 0.4A
C)
●
0.9
75
www.supertex.com
V DS =40V
100
3.0
VGS = 10V
1.2
125
150
4.0
1.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VN2450