ZXMP3A17E6TA Diodes Inc, ZXMP3A17E6TA Datasheet - Page 2

• Manufacturer Part Number: ZXMP3A17E6TA
• Description: MOSFET Small Signal 30V P-Chnl UMOS
• Manufacturer: Diodes Inc

Specifications of ZXMP3A17E6TA

• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.07 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4 A
• Power Dissipation: 1700 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS.
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
ZXMP3A17E6
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current V
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
S E M I C O N D U C T O R S
A
A
=25°C (a)
=25°C (b)
V
V
GS
GS
GS
=10V; T
=10V; T
=10V; T
A
A
A
=70°C (b)
=25°C (a)
=25°C (b)
SYMBOL
V
V
I
I
I
I
P
P
T
SYMBOL
R
R
D
DM
S
SM
2
D
D
j
DSS
GS
:T
θJA
θJA
stg
ADVANCE INFORMATION
-55 to +150
VALUE
LIMIT
-14.4
-14.4
13.6
113
-4.0
-3.2
-3.2
-2.5
-30
1.1
8.8
1.7
73
20
ISSUE 2 - JUNE 2003
mW/°C
mW/°C
UNIT
°C/W
°C/W
UNIT
W
W
°C
V
V
A
A
A
A