SI7326DN-T1-GE3 Vishay, SI7326DN-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI7326DN-T1-GE3
• Description: MOSFET Small Signal 30V 10A 3.5W 19.5mohm @ 10V
• Manufacturer: Vishay

Specifications of SI7326DN-T1-GE3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0195 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 6.5 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK 1212
• Continuous Drain Current Id: 10A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 30mohm
• Rds(on) Test Voltage Vgs: 25V
• Threshold Voltage Vgs Typ: 1.8V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74444.
Document Number: 74444
S-83051-Rev. C, 29-Dec-08
0.01
0.1
2
1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.02
0.05
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
Square Wave Pulse Duration (s)
10
-2
10
-1
Vishay Siliconix
Si7326DN
www.vishay.com
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