TN2510N8-G Supertex, TN2510N8-G Datasheet - Page 4

• Manufacturer Part Number: TN2510N8-G
• Description: MOSFET Small Signal 100V 1.5Ohm
• Manufacturer: Supertex
• Type: Power MOSFETr

Specifications of TN2510N8-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.73 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 1.5Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 730mA
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: SOT-89
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
100
1.1
1.0
0.9
75
50
25
10
8
6
4
2
0
0
-50
0
0
Capacitance vs. Drain-to-Source Voltage
BV
V
GS
DSS
2
Transfer Characteristics
10
0
f = 1MHz
= 25V
Variation with Temperature
V
V
GS
4
DS
T
(volts)
j
50
20
° (
(volts)
C)
●
6
1235 Bordeaux Drive, Sunnyvale, CA 94089
100
30
8
(cont.)
C
C
RSS
ISS
150
10
40
4
1.2
1.1
1.0
0.9
0.8
10
10
8
6
4
2
0
8
6
4
2
0
-50
0
0
V
●
(th)
Gate Drive Dynamic Characteristics
Tel: [phone]
70pF
On-Resistance vs. Drain Current
and R
0.5
2
0
DS
Q (nanocoulombs)
V
V
GS
G
(th)
I
D
Variation with Temperature
1.0
(amperes)
= 5V
@ 1mA
4
V
T
DS
j
50
R
° (
DS(ON)
C)
= 10V
●
1.5
6
190 pF
www.supertex.com
V
GS
@ 5V, 0.75A
V
100
DS
= 10V
2.0
8
= 40V
150
2.5
10
2.0
1.6
1.2
0.8
0.4
TN2510