ZXMS6003GTA Diodes Inc, ZXMS6003GTA Datasheet - Page 4

• Manufacturer Part Number: ZXMS6003GTA
• Description: MOSFET Small Signal 60V IntelliFET Over Current Ctrl
• Manufacturer: Diodes Inc

Specifications of ZXMS6003GTA

• Minimum Operating Temperature: - 40 C
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 500 mOhms
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 1.6 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Absolute maximum ratings
NOTES:
(a) For I
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight
(c) For a device surface mounted on FR4 board and measured at t<=10s.
Issue 2 - March 2007
© Zetex Semiconductors plc 2007
Parameter
Continuous drain-source voltage
Drain-source voltage for short circuit protection V
Drain-source voltage for short circuit protection V
Continuous input voltage
Peak input voltage
Operating temperature range
Storage temperature range
Power dissipation @ T
Continuous drain current @ V
Continuous drain current @ V
Continuous source current (body diode)
Pulsed source current (body diode)
Unclamped single pulse inductive energy
Load dump protection
Electrostatic discharge (human body model)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Thermal resistance
Parameter
Junction to ambient
Junction to ambient
copper.
D(LIM)
< 1.2A (see safe operating area curve).
amb
=25°C
IN
IN
=10V; T
=5V; T
(a)
(c)
amb
amb
(b)
=25°C
=25°C
4
(b)
(b)
IN
IN
=10V
=5V
(a)
(a)
V
Symbol
Symbol
LoadDump
V
V
V
R
R
DS(SC)
DS(SC)
V
T
E
V
V
P
T
ESD
I
I
I
I
stg
AS
DS
D
D
IN
IN
S
S
D
j
JA
JA
,
-40 to +150
-55 to +150
-0.2 ... +10
-0.2 ... +20
40/150/56
ZXMS6003G
Limit
Limit
4000
550
2.5
1.6
1.4
60
36
20
80
50
28
E
3
8
www.zetex.com
°C/W
°C/W
Unit
Unit
mJ
°C
°C
W
V
V
V
V
V
A
A
A
A
V
V