DMN6068SE-13 Diodes Inc, DMN6068SE-13 Datasheet - Page 5

• Manufacturer Part Number: DMN6068SE-13
• Description: MOSFET Small Signal ENHANCE MODE MOSFET 60V N-CHAN
• Manufacturer: Diodes Inc

Specifications of DMN6068SE-13

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.068 Ohms to 0.1 Ohms
• Gate Charge Qg: 10.3 nC
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 5.6 A
• Power Dissipation: 16 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
DMN6068SE
Document Number DS32033 Rev. 2 - 2
1E-3
0.01
0.01
Typical Transfer Characteristics
0.01
100
0.1
0.1
0.1
On-Resistance v Drain Current
10
10
10
0.01
1
1
1
T = 25°C
V
0.1
T = 25°C
DS
1
V
V
= 10V
T = 150°C
DS
GS
3V
Output Characteristics
0.1
Drain-Source Voltage (V)
Gate-Source Voltage (V)
I
D
Drain Current (A)
2
3.5V
1
10V
1
3
T = 25°C
4V
4.5V
10
4
10
5V
5V
4.5V
www.diodes.com
3.5V
10V
V
4V
V
3V
GS
GS
5
5 of 9
Normalised Curves v Temperature
Source-Drain Diode Forward Voltage
0.01
0.01
0.1
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1
10
10
1
1
-50
0.2
T = 150°C
0.1
V
V
Tj Junction Temperature (°C)
T = 150°C
DS
SD
0.4
Output Characteristics
Drain-Source Voltage (V)
0
Source-Drain Voltage (V)
Diodes Incorporated
A Product Line of
V
I
V
I
D
D
0.6
GS
GS
= 250uA
= 12A
1
= V
= 10V
50
DS
10V
0.8
Vgs = 0V
100
T = 25°C
DMN6068SE
10
R
DS(on)
4.5V
1.0
V
3.5V
4V
2.5V
GS(th)
3V
2V
V
© Diodes Incorporated
GS
150
January 2011