TN0620N3-G Supertex, TN0620N3-G Datasheet - Page 4

• Manufacturer Part Number: TN0620N3-G
• Description: MOSFET Small Signal 200V 6Ohm
• Manufacturer: Supertex

Specifications of TN0620N3-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.25 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
200
150
100
1.1
1.0
0.9
4.0
3.2
2.4
1.6
0.8
50
0
0
-50
0
0
Capacitance vs. Drain-to-Source Voltage
V
BV
DS
DSS
2
= 25V
Transfer Characteristics
10
0
Variation with Temperature
V
V
GS
4
DS
T
(volts)
j
50
20
(
(volts)
O
C)
●
6
1235 Bordeaux Drive, Sunnyvale, CA 94089
f = 1MHz
100
30
(cont.)
8
C
C
RSS
ISS
150
10
40
4
1.4
1.2
1.0
0.8
0.6
15
12
10
9
6
3
0
8
6
4
2
0
-50
0
0
●
V
(th)
Gate Drive Dynamic Characteristics
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On-Resistance vs. Drain Current
V
and R
100 pF
GS
V
0.8
0.5
(th)
0
= 5V
@ 1mA
DS
Q (nanocoulombs)
G
I
D
Variation with Temperature
1.6
1.0
(amperes)
V
T
DS
j
50
(
O
C)
= 10V
●
R
2.4
DS
1.5
www.supertex.com
178 pF
@ 10V, 0.5A
V
GS
100
V
DS
3.2
2.0
= 10V
= 40V
150
4.0
2.5
2.0
1.6
1.2
0.8
0.4
0
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