DMP4050SSD-13 Diodes Inc, DMP4050SSD-13 Datasheet - Page 6
![MOSFET Small Signal MOSFET,P-CHANNEL -40V, -4.1A,-5.2A](/photos/16/8/160889/so8_sml.jpg)
DMP4050SSD-13
Manufacturer Part Number
DMP4050SSD-13
Description
MOSFET Small Signal MOSFET,P-CHANNEL -40V, -4.1A,-5.2A
Manufacturer
Diodes Inc
Datasheet
1.DMP4050SSD-13.pdf
(8 pages)
Specifications of DMP4050SSD-13
Minimum Operating Temperature
- 55 C
Configuration
Dual
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.038 Ohms
Gate Charge Qg
6.9 nC
Forward Transconductance Gfs (max / Min)
14 S
Drain-source Breakdown Voltage
- 40 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 4 A
Power Dissipation
1.25 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DMP4050SSD-13
Manufacturer:
DIODES/美台
Quantity:
20 000
Part Number:
DMP4050SSD-13-F
Manufacturer:
DIODES/美台
Quantity:
20 000
Typical Characteristics - continued
Test Circuits
DMP4050SSD
Document Number DS32107 Rev 2 - 2
1000
800
600
400
200
Capacitance v Drain-Source Voltage
0
0.1
V
G
-V
Q
DS
GS
Basic gate charge waveform
t
Switching time waveforms
r
- Drain - Source Voltage (V)
t
(on)
C
t
d(off)
ISS
1
Q
Q
G
GD
C
OSS
Charge
C
RSS
t
r
t
(on)
10
V
f = 1MHz
t
d(on)
GS
= 0V
www.diodes.com
90%
10%
V
V
6 of 8
DS
GS
Gate-Source Voltage v Gate Charge
10
8
6
4
2
0
0
Switching time test circuit
Gate charge test circuit
Pulse width
Duty factor 0.1%
12V
2
R
G
0.2 F
Diodes Incorporated
Q - Charge (nC)
1 S
4
A Product Line of
V
regulator
Current
GS
50k
I
G
V
6
GS
R
Same as
D.U.T
D
8
D.U.T
V
DS
10
V
I
D
DMP4050SSD
DS
= -6A
I
V
D
DS
= -20V
12
V
DD
© Diodes Incorporated
November 2010
14