VP3203N8-G Supertex, VP3203N8-G Datasheet

VP3203N8-G

Manufacturer Part Number

VP3203N8-G

Description

MOSFET Small Signal 30V 0.6Ohm

Manufacturer

Supertex

Datasheet

1.VP3203N3-G.pdf (6 pages)

Specifications of VP3203N8-G

Minimum Operating Temperature

- 55 C

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.6 Ohm @ 10 V

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

1.1 A

Power Dissipation

1600 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

SOT-89

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Features

►

Applications

►

Ordering Information

-G indicates package is RoHS compliant (‘Green’)

* Mil visual screening available.

Absolute Maximum Ratings

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

Soldering temperature*

Distance of 1.6mm from case for 10 seconds.

Device

VP3203

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C

High input impedance and high gain

Excellent thermal stability

Integral source-to-drain diode

Motor controls

Converters

Ampliﬁers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

ISS

and fast switching speeds

VP3203N3-G

TO-92

TO-243AA (SOT-89)

Package Options

●

VP3203N8-G

P-Channel Enhancement-Mode

Vertical DMOS FET

1235 Bordeaux Drive, Sunnyvale, CA 94089

-55

C to +150

300

Value

±20V

DGS

DSS

VP3203ND

Die*

Pin Conﬁgurations

Product Marking

Package may or may not include the following marks: Si or

Packages may or may not include the following marks: Si or

General Description

The Supertex VP3203 is an enhancement-mode (normally-

off) transistor that utilizes a vertical DMOS structure

and Supertex’s well-proven silicon-gate manufacturing

process. This combination produces a device with the

power handling capabilities of bipolar transistors, and the

high input impedance and positive temperature coefﬁcient

inherent in MOS devices. Characteristic of all MOS

structures, this device is free from thermal runaway and

thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

SOURCE

TO-92 (N3)

●

DSS

VP2LW

Y Y W W

3 2 0 3

Tel: 408-222-8888

-30

Si VP

(V)

DRAIN

/BV

TO-243AA (SOT-89) (N8)

GATE

DGS

YY = Year Sealed

WW = Week Sealed

W = Code for week sealed

TO-92 (N3)

●

= “Green” Packaging

(max)

www.supertex.com

DS(ON)

(Ω)

0.6

TO-243AA (SOT-89) (N8)

DRAIN

GATE

DRAIN

VP3203

SOURCE

(min)

14.0

D(ON)

(A)

Related parts for VP3203N8-G

VP3203N8-G Summary of contents

Page 1

... Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Die* VP3203N8-G VP3203ND Pin Conﬁgurations SOURCE Value TO-92 (N3) ...

Page 2

... V = -25V 1.0MHz -25V -2.0A 10Ω GEN - 300 - 0V PULSE R GEN D.U.T. Output INPUT ● Tel: 408-222-8888 ● www.supertex.com VP3203 I I † DR DRM (mA) (A) -650 -4.0 -1100 -4.0 = -10mA D = -10mA D = -10mA Max Rating DS = 125° -5. -1. -750mA D = -3. -1. -1. -2. -1. -1.0A SD ...

Page 3

... V (volts) DS Power Dissipation vs. Ambient Temperature 2.0 TO-243AA 1.6 1.2 TO-92 0.8 0 100 125 T (°C) A Thermal Response Characteristics 1.0 0.8 TO-243AA 0 25° 1.6W D 0.4 0.2 TO- 25° 0.001 0.01 0.1 1.0 t (seconds) p ● Tel: 408-222-8888 ● www.supertex.com VP3203 -10 150 10 ...

Page 4

... GS 1 -10V GS 0.8 0 -12 -16 I (amperes and R Variation with Temperature (th -10V, -3A DS(ON) 1.2 1.0 0 -10mA (th) 0.6 - 100 T (°C) j Gate Drive Dynamic Characteristics - -10V -20V DS 335pF -4 -2 200 (nanocoulombs) G ● Tel: 408-222-8888 ● www.supertex.com VP3203 -20 1.4 1.2 1.0 0.8 0.6 150 5 ...

Page 5

... Seating Plane E1 1 Symbol A MIN .170 Dimensions NOM - (inches) MAX .210 JEDEC Registration TO-92. * This dimension is not speciﬁed in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009 Front View Bottom View ...

Page 6

... Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship ...

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