TN2130K1-G Supertex, TN2130K1-G Datasheet - Page 2

• Manufacturer Part Number: TN2130K1-G
• Description: MOSFET Small Signal 300V 25Ohm
• Manufacturer: Supertex

Specifications of TN2130K1-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 25 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.085 A
• Power Dissipation: 360 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Characteristics
Notes:
Electrical Characteristics
Switching Waveforms and Test Circuit
Notes:
ΔR
† I
ΔV
R
BV
V
1.
2.
Sym
t
I
C
C
t
C
d(OFF)
I
I
G
V
TO-236AB (SOT-23)
D(ON)
DS(ON)
d(ON)
GS(th)
GSS
DSS
DS(ON)
t
OSS
RSS
t
D
GS(th)
t
ISS
SD
rr
DSS
FS
r
f
(continuous) is limited by max rated T
All D.C. parameters 100% tested at 25
All A.C. parameters sample tested.
Package
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
Gate body leakage
Zero gate voltage drain current
On-state drain current
Static drain-to-source on-state resistance
Change in R
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
Parameter
OUTPUT
INPUT
V
10V
0V
DD
0V
GS(th)
DS(ON)
10%
with temperature
with temperature
t
d(ON)
(continuous)
10%
t
(ON)
90%
●
(mA)
85
I
t
j
1235 Bordeaux Drive, Sunnyvale, CA 94089
r
D
.
O
(T
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
A
= 25
†
O
90%
t
C unless otherwise specified)
d(OFF)
t
(OFF)
(pulsed)
(mA)
200
I
D
t
90%
F
10%
Power Dissipation
2
Min
300
250
0.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
@T
0.36
A
(W)
= 25
Typ
250
400
GENERATOR
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
O
PULSE
C
●
Tel: [phone]
INPUT
R
Max
-5.5
100
100
2.4
1.1
5.0
7.0
1.8
10
25
50
15
10
12
15
GEN
-
-
-
-
mV/
mmho V
(
Units
%/
O
200
mA
C/W)
nA
µA
pF
θ
ns
ns
V
V
Ω
V
jc
O
O
C
C V
●
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
I
R
V
V
Conditions
D
GS
GS
GS
GS
GS
DS
GS
GS
GS
GS
DS
GS
DS
DD
GS
GS
GEN
www.supertex.com
(
= 120mA,
O
350
C/W)
θ
= 0V, I
= V
= V
= ± 20V, V
= 0V, V
= 0.8Max Rating,
= 0V, T
= 10V, V
= 4.5V, I
= 4.5V, I
= 25V, I
= 0V,
= 25V,
= 25V,
= 0V, I
= 0V, I
jA
= 25Ω
V
DD
DS
DS
R
L
, I
, I
D.U.T.
D
SD
SD
A
D
D
DS
OUTPUT
D
= 1.0mA
= 125
D
D
= 1.0mA
= 1.0mA
DS
= 120mA
= 120mA
(mA)
= 100mA
= Max Rating
I
= 120mA
= 120mA
85
DR
DS
= 25V
†
= 0V
O
TN2130
C
(mA)
I
200
DRM