DMN4027SSS-13 Diodes Inc, DMN4027SSS-13 Datasheet - Page 5

• Manufacturer Part Number: DMN4027SSS-13
• Description: MOSFET Small Signal MOSFET,N-CHANNEL 40V, 6.1A/- 8A
• Manufacturer: Diodes Inc

Specifications of DMN4027SSS-13

• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.031 Ohms
• Gate Charge Qg: 6.3 nC
• Forward Transconductance Gfs (max / Min): 22.8 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 1.56 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
DMN4027SSS
Document Number DS32103 Rev 1 - 2
1E-3
0.01
0.01
0.01
Typical Transfer Characteristics
0.1
0.1
0.1
On-Resistance v Drain Current
10
10
0.01
1
1
1
T = 25°C
V
0.1
DS
V
V
= 10V
DS
1
GS
Output Characteristics
T = 150°C
0.1
Drain-Source Voltage (V)
10V
Gate-Source Voltage (V)
I
D
Drain Current (A)
4.5V
3V
1
2
1
T = 25°C
10
3.5V
4V
T = 25°C
10
3
3.5V
www.diodes.com
4.5V
2.5V
10V
V
V
3V
GS
GS
5 of 8
Normalised Curves v Temperature
Source-Drain Diode Forward Voltage
1E-3
0.01
0.01
0.1
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1
10
10
1
1
-50
0.2
T = 150°C
0.1
V
V
Tj Junction Temperature (°C)
T = 150°C
DS
SD
Output Characteristics
0.4
Diodes Incorporated
Drain-Source Voltage (V)
0
Source-Drain Voltage (V)
A Product Line of
V
I
D
GS
10V
= 250uA
1
0.6
= V
50
V
I
D
DS
GS
= 12A
= 10V
T = 25°C
Vgs = 0V
100
0.8
DMN4027SSS
3.5V
4V
10
R
DS(on)
V
3V
2.5V
2V
GS(th)
© Diodes Incorporated
V
GS
150
1.0
March 2010