TN0604N3-G Supertex, TN0604N3-G Datasheet

MOSFET Small Signal 40V 0.75Ohm

TN0604N3-G

Manufacturer Part Number
TN0604N3-G
Description
MOSFET Small Signal 40V 0.75Ohm
Manufacturer
Supertex
Type
Power MOSFETr
Datasheet

Specifications of TN0604N3-G

Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.75 Ohm @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.7 A
Power Dissipation
740 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.75Ohm
Drain-source On-volt
40V
Gate-source Voltage (max)
±20V
Drain Current (max)
700mA
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-92
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Features
Applications
-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*
Package may or may not include the following marks: Si or
Supertex inc.
Ordering Information
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
TN0604
Device
Distance of 1.6mm from case for 10 seconds.
Low threshold (1.6V max.)
High input impedance
Low input capacitance (140pF typical)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Y Y W W
TN0604N3-G
0 6 0 4
S iTN
Supertex inc.
TO-92
-
Package Option
YY = Year Sealed
WW = Week Sealed
TO-92 (N3)
20-Lead SOW
TN0604WG-G
= “Green” Packaging
-
1235 Bordeaux Drive, Sunnyvale, CA 94089
N-Channel Enhancement-Mode
Vertical DMOS FET
-55
BV
O
C to +150
DSS
(V)
40
40
/BV
300
Value
BV
BV
±20V
DGS
DGS
DSS
O
O
C
C
R
Pin Configuration
Product Marking
Package may or may not include the following marks: Si or
0.75
1.00
max
DS(ON)
(Ω)
General Description
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
The Quad Array package (20-Lead SOW) uses four
independent
independent channels.
SOURCE
Bottom Marking
TO-92 (N3)
Top Marking
CCCCCCCCCCC
TN0 6 0 4 W G
LLL LL LL LLL
I
D(ON)
min
4.0
4.0
(A)
YYW W AAA
Tel: 408-222-8888
DRAIN
DMOS
GATE
20-Lead SOW (WG)
V
YY = Year Sealed
WW = Week Sealed
A = Assembler ID
L = Lot Number
C = Country of Origin*
* May be part of top marking
max
1.6
1.6
GS(th)
(V)
transistors
= “Green” Packaging
D_1
www.supertex.com
D_1
D_1
G_1
20-Lead SOW (WG)
S_1
S_2
G_2
which
D_2
D_2
D_2
TN0604
provide
D_4
D_4
D_4
G_4
S_4
S_3
G_3
D_3
D_3
D_3
four

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TN0604N3-G Summary of contents

Page 1

... Analog switches ► General purpose line drivers ► Telecom switches Ordering Information Package Option Device TO-92 20-Lead SOW TN0604N3-G - TN0604 - TN0604WG-G -G indicates package is RoHS compliant (‘Green’) Absolute Maximum Ratings Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating and storage temperature ...

Page 2

... Reverse recovery time rr Notes: 1. All D.C. parameters 100% tested All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V INPUT 10 (ON) t d(ON) VDD 10% OUTPUT 0V 90% Supertex inc. Power Dissipation I D † (pulsed) A (A) (W) 4.6 0.74 4.0 1 unless otherwise specified) ...

Page 3

... Typical Performance Curves Output Characteristics (volts) DS Transconductance vs. Drain Current 2.0 V =25V DS 1 (amperes) D Maximum Rated Safe Operating Area 10 TO-92 (pulsed) 1.0 TO-92 (DC) 0 0.01 0 (volts) DS Supertex inc 10V - 125 100 ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 3 Saturation Characteristics (volts) DS Power Dissipation vs. Ambient Temperature 2 ...

Page 4

... Variation with Temperature DSS 1.1 1.0 0.9 - Transfer Characteristics 25V (volts) GS Capacitance vs. Drain-to-Source Voltage 200 f = 1.0MHz 150 100 (volts) DS Supertex inc. (cont.) 100 150 125 ISS C RSS 30 40 ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 4 On-Resistance vs. Drain Current 2 5. 1. 5.0 I (amperes) D ...

Page 5

... Dimensions NOM - (inches) MAX .210 JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC drawing. The value listed is for reference only. † This dimension is a non-JEDEC dimension. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version D080408. Supertex inc Front View ...

Page 6

... This dimension is not specified in the original JEDEC drawing. The value listed is for reference only. Drawings are not to scale. Supertex Doc. #: DSPD-20SOWWG, Version C090408. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www ...

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