TN0110N3-G Supertex, TN0110N3-G Datasheet - Page 2

• Manufacturer Part Number: TN0110N3-G
• Description: MOSFET Small Signal 100V 3Ohm
• Manufacturer: Supertex
• Type: Power MOSFETr

Specifications of TN0110N3-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.35 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 3Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Characteristics
Notes:
Electrical Characteristics
Switching Waveforms and Test Circuit
Notes:
OUTPUT
ΔR
† I
ΔV
R
BV
V
1.
2.
Sym
t
INPUT
I
C
C
t
C
d(OFF)
I
I
G
V
D(ON)
DS(ON)
d(ON)
GS(th)
GSS
DSS
DS(ON)
t
OSS
RSS
t
D
GS(th)
t
ISS
SD
rr
DSS
FS
r
f
(continuous) is limited by max rated T
All D.C. parameters 100% tested at 25
All A.C. parameters sample tested.
Package
10V
V
0V
0V
TO-92
DD
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
Gate body leakage
Zero Gate voltage drain current
ON-state drain current
Static drain-to-source on-state resistance
Change in R
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
Parameter
10%
t
d(ON)
10%
t
GS(th)
DS(ON)
(ON)
90%
with temperature
t
r
with temperature
(continuous)
●
(mA)
350
I
j
1235 Bordeaux Drive, Sunnyvale, CA 94089
D
.
O
(T
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
90%
A
t
d(OFF)
= 25
†
t
(OFF)
O
C unless otherwise specified)
(pulsed)
t
90%
f
2.0
(A)
I
D
10%
Power Dissipation
2
0.75
Min
100
225
0.6
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
@T
C
(W)
1.0
= 25
Typ
-3.2
400
400
1.4
3.4
2.0
1.6
0.6
4.0
2.0
3.0
6.0
3.0
1.0
50
25
-
-
-
-
-
O
GENERATOR
C
●
PULSE
Tel: [phone]
Max
-5.0
100
500
2.0
4.5
3.0
1.1
8.0
5.0
5.0
7.0
6.0
1.5
10
60
35
-
-
-
-
-
INPUT
R
GEN
mV/
mmho V
(
Units
%/
O
125
C/W)
θ
µA
µA
nA
pF
ns
ns
Ω
V
V
A
V
jc
O
O
C
C V
●
V
V
V
V
V
ing, T
V
V
V
V
V
V
V
f = 1.0MHz
V
I
R
V
V
Conditions
D
www.supertex.com
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS
GS
DS
DD
GS
GS
GEN
(
= 1.0A,
O
170
C/W)
θ
= 0V, I
= V
= V
= ± 20V, V
= 0V, V
= 0V, V
= 5.0V, V
= 10V, V
= 4.5V, I
= 10V, I
= 10V, I
= 25V, I
= 0V,
= 25V,
= 25V,
= 0V, I
= 0V, I
ja
= 25Ω
A
= 125°C
DS
DS
, I
, I
D
SD
SD
D
D
DS
DS
D
D
D
= 1.0mA
= 0.5mA
= 1.0mA
D
DS
(mA)
= 500mA
= 500mA
350
DS
= 500mA
I
= 500mA
= 500mA
= Max Rating
= 0.8 Max Rat-
= 250mA
DR
DS
= 25V
V
R
= 25V
†
DD
L
= 0V
TN0110
D.U.T.
OUTPUT
I
2.0
(A)
DRM