Si4012-C1-GT Silicon Laboratories Inc, Si4012-C1-GT Datasheet - Page 4

no-image

Si4012-C1-GT

Manufacturer Part Number
Si4012-C1-GT
Description
RF Transmitter 27-960 MHz RF Transmitter
Manufacturer
Silicon Laboratories Inc
Datasheet
Table 3. DC Characteristics
Si4012
1. Electrical Specifications
Table 2. Absolute Maximum Ratings
4
Table 1. Recommended Operating Conditions
Parameter
Power Saving Modes
TX Mode Current @
10 dBm
Notes:
Parameter
Supply Voltage
Input Current
Input Voltage
Junction Temperature
Storage Temperature
Notes:
Parameter
Supply Voltage
Supply Voltage Slew Rate
Ambient Temperature
Digital Input Range
*Note: Recommend bypass capacitor = 1 µF; slew rate measured 1 V < V
1. All specification guaranteed by production test unless otherwise noted. Production test conditions and max limits are
2. Guaranteed by qualification. Qualification test conditions are listed in the "Production Test Conditions" section on
1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be
2. Handling and assembly of these devices should only be done at ESD-protected workstations.
3. All input pins besides V
4. For GPIO pins configured as inputs.
restricted to the conditions as specified in the operational sections of this data sheet. Exposure beyond recommended
operating conditions for extended periods may affect device reliability.
listed in the "Production Test Conditions" section on page 9.
page 9.
3
4
Symbol
I
I
I
Shutdown
TX_OOK
TX_FSK
I
Idle
DD
.
1
Symbol
V
T
DD
A
lowest current consumption idle mode
1,2
Symbol
T
V
T
V
OOK, Manchester encoded
I
STG
DD
IN
OP
Register values retained,
IN
Initial Battery Insertion*
Lowest current mode
Digital Input Signals
Test Condition
Conditions
Rev 0.2
FSK
–0.3 to (V
DD
–0.5 to 3.9
–55 to 125
,< 1.7 V.
–40 to 90
Value
10
DD
+ 0.3)
–0.3
Min
1.8
–40
20
Min
Typ
25
14.2
19.8
Typ
600
10
V
DD
Max
Unit
650
3.6
mA
85
C
C
V
V
+ 0.3
Max Units
Unit
mV/
us
°C
mA
mA
V
µA
nA
V

Related parts for Si4012-C1-GT