NTE268 NTE ELECTRONICS, NTE268 Datasheet - Page 2

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NTE268

Manufacturer Part Number
NTE268
Description
Replacement Semiconductors TO-202 NPN DAR PWR
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE268

Product
Power Amplifiers
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Electrical Characteristics: (T
Note 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
OFF Characteristics
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Dynamic Characteristics
Collector Capacitance
High Frequency Current Gain
NTE269
NTE268
B
B
Parameter
NTE268
NTE269
C
E
C
E
A
= +25°C unless otherwise specified)
V
Symbol
V
V
(BR)CEO
I
I
CE(sat)
I
BE(sat)
h
|h
CBO
EBO
C
CES
FE
cb
fe
|
I
V
V
V
I
I
I
I
V
I
C
C
C
C
C
C
CB
CE
EB
CB
(30.48)
1.200
= 10mA, Note 3
= 200mA, V
= 1.5A, V
= 1.5A, I
= 1.5A, I
= 20mA, V
Ref
= 13V, I
= 50V, I
= 50V, V
= 10V, I
.100 (2.54)
(10.16)
(12.7)
(7.62)
Test Conditions
.500
.300
.400
Min
B
B
CE
C
E
E
= 3mA
= 3mA
BE
CE
= 0, T
= 0
= 0, f = 1MHz
CE
= 5V
= 0
= 5V, f = 100MHz
C
.380 (9.56)
= 5V
E
J
= +150°C
B
C
(9.52)
.325
.070 (1.78) x 45°
.132 (3.35) Dia
.100 (2.54)
.050 (1.27)
10000
1000
.180 (4.57)
Min
1.0
50
-
-
-
-
-
-
-
Chamf
Typ
-
-
-
-
-
-
-
-
-
-
-
Max
100
0.5
1.5
2.5
20
10
25
-
-
-
-
Unit
μA
μA
nA
pF
pF
V
V
V

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