NTE244 NTE ELECTRONICS, NTE244 Datasheet
NTE244
Manufacturer Part Number
NTE244
Description
Replacement Semiconductors TO-3 PNP DAR PWR AMP
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE243.pdf
(2 pages)
Specifications of NTE244
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
-80V
Power Dissipation Pd
100W
Dc Collector Current
-8A
Dc Current Gain Hfe
750
Operating Temperature Range
-65°C To +200°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE243 (NPN) and NTE244 (PNP) are silicon complementary Darlington transistors in a TO3
type case designed for general–purpose amplifier and low–frequency switching applications.
Features:
D High DC Current Gain: h
D Collector–Emitter Sustaining Voltage: V
D Low Collector–Emitter Saturation Voltage:
D Monolithic Construction with Built–In Base–Emitter Shunt Resistors
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Electrical Characteristics: (T
Note 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%
OFF Characteristics
Collector–Emitter SustainingVoltage
Collector Cutoff Current
Emitter Cutoff Current
V
Continuous
Peak
Derate Above 25 C
CE(sat)
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 2V Max @ I
= 3V Max @ I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EB
CB
C
NTE243 (NPN) & NTE244 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Darlington Power Amplifier
C
C
stg
A
= 3000 Typ @ I
= 4A
= 8A
V
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
CEO(sus)
I
I
I
CEO
EBO
CEX
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
I
V
V
V
V
C
J
thJC
CE
CE
CE
BE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 100mA, I
CEO(sus)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 80V, V
= 5V, I
= 40V, I
= 80V, V
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 4A
C
Test Conditions
E
BE(off)
= 80V Min @ 100mA
= 0
BE(off)
B
= 0
= 0, Note 1
= 1.5V, T
= 1.5V
A
= +150 C
Min
80
–
–
–
–
Typ
–65 to +200 C
–65 to +200 C
–
–
–
–
–
0.571W/ C
Max Unit
0.5
0.5
5.0
2.0
1.78 C/W
–
120mA
100W
mA
mA
mA
mA
80V
80V
16A
V
5V
8A
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NTE244 Summary of contents
Page 1
... NTE243 (NPN) & NTE244 (PNP) Silicon Complementary Transistors Description: The NTE243 (NPN) and NTE244 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: D High DC Current Gain Collector–Emitter Sustaining Voltage Low Collector– ...
Page 2
... Base–Emitter ON Voltage Dynamic Characteristics Small–Signal Current Gain Magnitude of Common Emitter Small–Signal Short–Circuit Forward Current Transfer Ratio Output Capacitance NTE243 NTE244 Note 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2% NTE243 B NTE244 B = +25 C unless otherwise specified) A Symbol Test Conditions 3V ...