NTE2389 NTE ELECTRONICS, NTE2389 Datasheet
NTE2389
Manufacturer Part Number
NTE2389
Description
Replacement Semiconductors MOSFET N CHN
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE2389.pdf
(2 pages)
Specifications of NTE2389
Transistor Polarity
N Channel
Continuous Drain Current Id
35A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
45mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Absolute Maximum Ratings: (T
Drain–Source Voltage, V
Drain–Gate Voltage (R
Drain Current, I
Gate–Source Voltage, V
Maximum Power Dissipation, P
Operating Junction Temperature, T
Storage Temperature range, T
Maximum Thermal Resistance, Junction–to–Case, R
Typical Thermal Resistance, Junction–to–Ambient, R
Electrical Characteristics: (T
Static Ratings
Drain–Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate–Source Leakage Current
Drain–Source On–State Resistance
Dynamic Ratings
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous
Pulsed
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GS
GS
DS
= 20k ), V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
N–Ch, Enhancement Mode
stg
A
D
= +25 C unless otherwise specified)
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
R
V
J
BV
High Speed Switch
= +25 C unless otherwise specified)
I
C
I
DS(on)
C
GS(th)
C
GSS
DSS
g
DGR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
oss
rss
DSS
iss
fs
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2389
MOSFET
I
I
V
V
V
I
I
V
D
D
D
D
DS
GS
GS
DS
= 0.25mA, V
= 1mA, V
= 20A, V
= 20A, V
= 60V,
= 25V, V
= 0
= 30V, V
Test Conditions
thJC
thJA
DS
DS
GS
GS
= 25V
DS
GS
= V
= 10V
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 0, f = 1MHz
T
T
= 0
= 0
J
J
GS
= +25 C
= +125 C
Min
2.1
60
–
–
–
–
8
–
–
–
1650 2000
13.5
Typ
560
300
3.0
0.1
10
40
–
1
–55 to +175 C
Max
100
750
400
4.0
1.0
10
45
–
–
1.2 C/W
60 C/W
+175 C
mhos
125W
Unit
152A
m
mA
nA
pF
pF
pF
V
V
60V
60V
35A
30V
A
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NTE2389 Summary of contents
Page 1
... Gate Threshold Voltage Zero Gate Voltage Drain Current Gate–Source Leakage Current Drain–Source On–State Resistance Dynamic Ratings Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance NTE2389 MOSFET N–Ch, Enhancement Mode High Speed Switch = +25 C unless otherwise specified DGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Dynamic Ratings (Cont’d) Turn–On Time Turn–Off Time Internal Drain Inductance Internal Source Inductance Reverse Diode Continuous Reverse Drain Current Pulsed Reverse Drain Current Diode Forward On–Voltage Reverse Recovery Time Reverse Recovery Charge .147 (3.75) .070 ...