NTE123 NTE ELECTRONICS, NTE123 Datasheet
NTE123
Manufacturer Part Number
NTE123
Description
Replacement Semiconductors TO-39 NPN AUDIO AMP
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE123.pdf
(3 pages)
Specifications of NTE123
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
40V
Transition Frequency Typ Ft
300MHz
Power Dissipation Pd
800mW
Dc Collector Current
800mA
Dc Current Gain Hfe
300
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Electrical Characteristics: (T
OFF Characteristics
Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Base Cuttoff Current
Derate Above 25 C
Derate Above 25 C
Parameter
General Purpose Audio Amplifier, Switch
EBO
CBO
A
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
= +25 C), P
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon NPN Transistor
V
V
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(BR)CEO
(BR)CBO
(BR)EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
I
CBO
EBO
CEX
I
BL
D
D
J
I
I
I
V
V
V
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
C
E
NTE123
CE
CE
CE
EB
CE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 10 A, I
= 10mA, I
= 10 A, I
= 60V, I
= 60V, I
= 60V, V
= 3V, I
= 60V, V
Test Conditions
C
E
C
B
E
E
= 0
EB(off)
EB(off)
= 0
= 0
= 0
= 0
= 0, T
= 3V
= 3V
A
= +150 C
Min
40
75
6
–
–
–
–
–
Typ
–
–
–
–
–
–
–
–
–65 to +200 C
–65 to +200 C
Max
0.01
10
10
10
20
–
–
–
5.33mW/ C
20mW/ C
800mW
800mA
Unit
nA
nA
nA
3.0W
V
V
V
A
A
40V
75V
6V
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NTE123 Summary of contents
Page 1
... Emitter–Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Base Cuttoff Current NTE123 Silicon NPN Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter ON Characteristics (Note 1) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Small–Signal Characteristics Current Gain–Bandwidth Product Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small–Signal Current Gain Output Admittance Collector–Base Time Constant ...
Page 3
Max .500 (12.7) Min Emitter 45 .031 (.793) .370 (9.39) Dia Max .355 (9.03) Dia Max .018 (0.45) Base Collector/Case ...