NTE48 NTE ELECTRONICS, NTE48 Datasheet - Page 2
![Replacement Semiconductors TO-92 NPN GP DAR AMP](/photos/19/7/190745/4551324_sml.jpg)
NTE48
Manufacturer Part Number
NTE48
Description
Replacement Semiconductors TO-92 NPN GP DAR AMP
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE48.pdf
(2 pages)
Specifications of NTE48
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
50V
Transition Frequency Typ Ft
1GHz
Power Dissipation Pd
1W
Dc Collector Current
1A
Dc Current Gain Hfe
40000
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Electrical Characteristics (Cont’d): (T
Note 1. Pulse Test: Pulse Width
ON Characteristics (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter ON Voltage
Small–Signal Characteristics
Current Gain–Bandwidth Product
Collector–Base Capacitance
B
Parameter
C
E
.240 (6.09) Max
Symbol
V
V
300 s, Duty Cycle
CE(sat)
BE(on)
h
C
(8.62)
(13.0)
.100 (2.54)
.339
Max
.512
f
Min
FE
T
cb
A
= +25 C unless otherwise specified)
I
I
I
I
I
f = 100MHz
V
C
C
C
C
C
CB
= 200mA, V
= 1000mA, V
= 1000mA, I
= 1000mA, V
= 200mA, V
= 10V, I
Test Conditions
E B C
E
= 0, f = 1MHz
2%
CE
CE
B
CE
CE
= 2mA
= 5V
= 5V,
= 5V
= 5V
25,000
4,000
(5.08)
Min
100
.200
Max
–
–
–
.026 (.66)
Dia Max
Seating Plane
Typ
–
–
–
–
–
–
40,000
1000
Max
1.5
2.0
10
–
MHz
Unit
pF
V
V