NTE2324 NTE ELECTRONICS, NTE2324 Datasheet
NTE2324
Manufacturer Part Number
NTE2324
Description
Replacement Semiconductors TO-3PML NPN HI-SPD
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE2324.pdf
(2 pages)
Specifications of NTE2324
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
800V
Power Dissipation Pd
70W
Dc Collector Current
8A
Dc Current Gain Hfe
10
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Applications:
D Color TV Horizontal Deflection Output
Features:
D High Speed (t
D High Breakdown Voltage (V
D High Reliability (adoption of HVP process)
Absolute Maximum Ratings:
Collector to Base Voltage, V
Collector to Emitter Voltage, V
Emitter to Base Voltage, V
Collector Current, I
Collector Dissipation (T
Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
DC Current Gain
Fall Time
Continuous
Peak
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
f
= 100nsec)
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Color TV Horizontal Deflection Output
C
J
= +25°C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
CBO
CEO
CBO
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TO3PML Type Package
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon NPN Transistor
= +25°C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
= 1500V)
Symbol
V
V
CEO(sus)
C
I
I
CE(sat)
BE(sat)
I
h
CBO
EBO
CES
FE
t
f
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2324
V
V
I
V
I
I
V
V
I
C
C
C
C
CE
CB
EB
CE
CE
= 100mA, I
= 6A, I
= 6A, I
= 6A, I
= 4V
= 1500V
= 800V
= 5V, I
= 5V, I
Test Conditions
B1
B
B
= 1.2A
= 1.2A
C
C
= 1.2A, I
= 1A
= 6A
B
= 0
B2
= 2.4A
Min
800
−
−
−
−
−
8
5
−
Typ
0.1
−
−
−
−
−
−
−
−
−55° to +150°C
Max Unit
1.0
1.0
5.0
1.5
0.3
10
13
−
−
+150°C
Rev. 4−11
1500V
800V
mA
mA
μA
70W
μs
V
V
V
30A
6V
8A
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NTE2324 Summary of contents
Page 1
... Emitter Cutoff Current Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage DC Current Gain Fall Time NTE2324 Silicon NPN Transistor TO3PML Type Package = 1500V) CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Dia .630 (16.0) .866 (22. .158 (4.0) .215 (5.45) E .040 (1.0) ...