NTE46 NTE ELECTRONICS, NTE46 Datasheet - Page 2

• Manufacturer Part Number: NTE46
• Description: Replacement Semiconductors TO-92 NPN GP DAR AMP
• Manufacturer: NTE ELECTRONICS

Specifications of NTE46

• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 100V
• Transition Frequency Typ Ft: 200MHz
• Power Dissipation Pd: 625mW
• Dc Collector Current: 500mA
• Dc Current Gain Hfe: 10000
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics (Cont’d): (T
Note 1. Pulse Test: Pulse Width
Note 2. f
ON Characteristics (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter ON Voltage
Small–Signal Characteristics
Current Gain–Bandwidth Product
Output Capacitance
B
T
= h
Parameter
fe
 f
test
C
E
Symbol
V
V
300 s, Duty Cycle
CE(sat)
C
BE(on)
h
f
obo
FE
T
.105 (2.67) Max
.205 (5.2) Max
A
= +25 C unless otherwise specified)
I
I
I
I
I
I
f = 100MHz, Note 2
V
.100 (2.54)
C
C
C
C
C
C
CB
= 10mA, V
= 100mA, V
= 10mA, I
= 100mA, I
= 100mA, V
= 10mA, V
(5.33)
(12.7)
.210
.500
Max
Min
= 10V, I
Test Conditions
B
E
CE
CE
B
= 0, f = 100kHz
2%
= 0.01mA
CE
CE
= 0.1mA
E B C
= 5V
= 5V,
= 5V
= 5V
.050 (1.27)
.135 (3.45) Min
(4.2)
.165
Max
.105 (2.67) Max
10,000
10,000
.021 (.445) Dia Max
Seating Plane
Min
125
–
–
–
–
Typ
200
0.7
0.8
1.4
5.0
–
–
Max Unit
1.2
1.5
2.0
8.0
–
–
–
MHz
pF
V
V
V