EXB-V8V223JV Panasonic, EXB-V8V223JV Datasheet - Page 4

• Manufacturer Part Number: EXB-V8V223JV
• Description: Resistor Networks & Arrays 22K OHM 5%
• Manufacturer: Panasonic
• Series: EXBVr
• Type: Arrayr

Specifications of EXB-V8V223JV

• Product Type: Arrays
• Circuit Type: Isolated
• Number Of Resistors: 4
• Resistance: 22 KOhms
• Tolerance: 5 %
• Temperature Coefficient: +/- 200 PPM / C
• Package / Case: 0603 (1608 metric)
• Operating Temperature Range: - 55 C to + 125 C
• Dimensions: 0.3 mm Dia. x 1.6 mm W x 3.2 mm L x 0.84 mm H
• Termination Style: SMD/SMT
• Technology: Thick Film
• Power Rating Per Resistor: 1/16W
• Tolerance (+ Or -): 5%
• Circuit Designator: ISOL
• Mounting Style: Surface Mount
• Military Standard: Not Required
• Operating Temp Range: -55C to 125C
• No. Of Terminals: 8
• Case Style: Molded
• Failure Rate: Not Required
• Terminal Pitch: 0.8
• Product Length (mm): 3.2mm
• Product Depth (mm): 1.6mm
• Product Height (mm): 0.6mm
• Resistor Values: 22 KOhms
• Power Rating: 0.063 Watt
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

● Carrier Tape
● Taping Reel
■
Design and specifi cations are each subject to change without notice. Ask factory for the current technical specifi cations before purchase and/or use.
Should a safety concern arise regarding this product, please be sure to contact us immediately.
Land pattern design
Recommended land pattern design for Network chip is shown below.
EXBN8V
EXB2HV
EXBV8V
EXBS8V
EXB24V
EXB28V
EXB34V
EXB38V
EXBV4V
EXB14V
EXB18V
Type
Type
14V
24V
b
c
2.80
1.20
1.95
0.70
0.30
0.5
a
A
Punched Carrier
±0.20
+0.10
±0.10
±0.15
–0.05
φA
T
0.35 to 0.40
φC
0.95
1.95
3.60
1.95
3.60
5.70
1.60
1.20
2.20
4.10
0.30
B
b
±0.20
+0.05
±0.10
±0.10
±0.15
±0.20
±0.20
±0.20
±0.20
–0.10
±0.10
Dimensions
Embossed Carrier
12.00
8.00
W
T
T
W
0.30
0.30
±0.20
±0.30
c
Conductor
Solder Resist
(Not to scale)
3.50
5.50
0.80 to 0.90
Unit (mm)
1.4 to 1.5
F
±0.05
±0.20
d
φD
0
A
1.75
E
±0.10
2.00
4.00
V4V,V8V
34V,38V
P
EXB14V,18V
EXB24V,28V
EXBN8V
EXB2HV
EXB34V,38V
EXBV4V,V8V
EXBS8V
Type
S8V
1
18V
P
P
1
1
±0.10
±0.10
Type
(2 mm pitch)
P
2
0.20 to 0.30 0.15 to 0.20 0.15 to 0.20 0.80 to 0.90
2.00
0.7 to 0.9
0.7 to 0.9
1 to 1.2
P
P
f
0
2
±0.05
a
180.0
a
φA
4.00
b
+0
–3.0
0.4 to 0.45 0.4 to 0.45
0.5 to 0.75 0.5 to 0.75
0.4 to 0.5
φD
P
0
±0.10
1
60 min. 13.0
b
(Only Emboss)
Dimensions
φB
1.50
Chip Resistor Array
c
φD
0.4 to 0.5
+0.10
–0
0
φC
c
±1.0
1.60 max. 1.50
0.84
0.52
0.70
(Not to scale)
13.0
9.0
T
Unit (mm)
2.2 to 2.6
3.2 to 3.8
±0.05
±0.05
±0.05
W
2 to 2.4
±1.0
±1.0
f
Unit (mm)
Unit (mm)
Jun. 2008
15.4
11.4
φD
_
T
+0.10
–0
1
±1.0
±2.0