TISP61089ASDR-S Bourns Inc., TISP61089ASDR-S Datasheet - Page 4

• Manufacturer Part Number: TISP61089ASDR-S
• Description: PROTECTOR OVER VOLTAGE
• Manufacturer: Bourns Inc.
• Type: TSPDr

Specifications of TISP61089ASDR-S

• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Voltage - Breakover: *
• Voltage - Off State: 120V
• Current - Peak Pulse (10 X 1000µs): 30A
• Current - Hold (ih): 150mA
• Number Of Elements: 2
• Capacitance: 100pF
• Breakover Current Ibo Max: 11 A
• Rated Repetitive Off-state Voltage Vdrm: 120 V
• Off-state Leakage Current @ Vdrm Idrm: 0.005 mA
• Holding Current (ih Max): 150 mA
• Mounting Style: SMD/SMT
• Repetitive Peak Off-state Volt: 120V
• Off-state Voltage: 120V
• Hold Current: 150mA
• Gate Trigger Current (max): 5mA
• Gate Trigger Voltage (max): 2.5V
• Package Type: SOIC
• Peak Repeat Off Current: 5uA
• Peak Surge On-state Current (max): 11A
• Mounting: Surface Mount
• Pin Count: 8
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - On State: -
• Current - Peak Pulse (8 X 20µs): -
• Lead Free Status / Rohs Status: Compliant

Parameter Measurement Information
Characteristic
Switching
TISP61089 Gated Protector Series
-v
Quadrant III
V
V
(BO)
GK(BO)
V
GG
Unless Otherwise Noted, All Voltages are Referenced to the Anode
Figure 1. Voltage-Current Characteristic
I
FSM
(= |I
I
TSM
PPSM
|)
I
F
+i
-i
I
I
I
I
I
D
PPSM
T
TSM
H
V
F
Customers should verify actual device performance in their specific applications.
Specifications are subject to change without notice.
Characteristic
Conduction
Forward
NOVEMBER 1995 - REVISED JULY 2008
Quadrant I
PM6XAAC
+v