STPS30H60CKY-TR STMicroelectronics, STPS30H60CKY-TR Datasheet - Page 3

• Manufacturer Part Number: STPS30H60CKY-TR
• Description: DIODE SCHOTTKY 60V 20-POWERSOIC
• Manufacturer: STMicroelectronics

Specifications of STPS30H60CKY-TR

• Diode Type: Schottky
• Voltage - Forward (vf) (max) @ If: 580mV @ 15A
• Current - Reverse Leakage @ Vr: 150µA @ 60V
• Current - Average Rectified (io) (per Diode): 15A
• Voltage - Dc Reverse (vr) (max): 60V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: 497-11103-2

STPS30H60C-Y
Figure 1.
Figure 3.
Figure 5.
1.E+02
1.E+01
1.E+00
12
10
300
250
200
150
100
1.E-01
1.E-02
1.E-03
8
6
4
2
0
50
1.E-03
0
0
P
F(AV)
I (A)
M
I
M
0
I (mA)
R
(W)
2
δ = 0.5
5
t
4
Average forward power dissipation
versus average forward current (per
diode, all anode pins connected)
Non repetitive surge peak forward
current versus overload duration
(maximum values)
Reverse leakage current versus
reverse voltage applied (per diode)
(typical values)
10
δ = 0.05
15
1.E-02
6
20
(per diode, all anode pins connected)
8
δ = 0.1
T = 125 °C
T = 150 °C
T = 100 °C
T = 75 °C
T = 50 °C
T = 25 °C
25
j
j
j
j
j
j
10
30
δ = 0.2
δ = t / T
12
35
1.E-01
p
T
40
14
t
p
δ = 0.5
45
16
T = 125 °C
c
T = 25 °C
T = 75 °C
c
50
c
Doc ID 18295 Rev 1
I
F(AV)
18
t(s)
55
V (V)
1.E+00
δ = 1
R
(A)
20
60
Figure 2.
Figure 4.
Figure 6.
10.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
18
16
14
12
10
1.0
0.1
8
6
4
2
0
1.E-04
0
I
F(AV)
Z
1
C(nF)
Single pulse
δ = t / T
th(j-c)
(per diode, all anode pins connected)
(A)
p
/R
th(j-c)
T
25
1.E-03
t
Average forward current versus
ambient temperature (per diode, all
anode pins connected) (δ = 0.5)
Relative variation of thermal
impedance junction to case versus
pulse duration
Junction capacitance versus
reverse voltage applied (per diode)
(typical values)
p
50
1.E-02
R th(j-a) = 10 °C/W
75
10
1.E-01
100
R th(j-a) = R th(j-c)
Characteristics
T
1.E+00
amb
V
osc
(°C)
F = 1 MHz
125
T = 25 °C
= 30 mV
j
V (V)
t (s)
p
R
1.E+01
RMS
150
100
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