IRFML8244TRPBF International Rectifier, IRFML8244TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRFML8244TRPBF
• Description: MOSFET N-CH 25V 5.8A SOT23
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFML8244TRPBF

• Input Capacitance (ciss) @ Vds: 430pF @ 10V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 5.8A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 5.8A
• Vgs(th) (max) @ Id: 2.35V @ 10µA
• Gate Charge (qg) @ Vgs: 5.4nC @ 10V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 41 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.8 A
• Power Dissipation: 1.25 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 5.4 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFML8244TRPBFTR

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0.001
6
5
4
3
2
1
0
1000
0.01
100
0.1
Fig 9. Maximum Drain Current vs.
25
10
1E-006
1
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
Ambient Temperature
D = 0.50
T A , Ambient Temperature (°C)
50
0.05
0.10
0.02
0.20
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
75
100
0.0001
125
t 1 , Rectangular Pulse Duration (sec)
150
0.001
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
90%
10%
V
DS
GS
0.01
IRFML8244TRPbF
R
t
d(on)
V
V
V
t
≤ 0.1 %
≤ 1
r
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
D.U.T.
R
t
d(off)
1
t
f
+
-
V
5
10