IRLML6346TRPBF International Rectifier, IRLML6346TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRLML6346TRPBF
• Description: MOSFET N-CH 30V 3.4A SOT23
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLML6346TRPBF

• Input Capacitance (ciss) @ Vds: 270pF @ 24V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 63 mOhm @ 3.4A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 1.1V @ 10µA
• Gate Charge (qg) @ Vgs: 2.9nc @ 4.5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 63 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 3.4 A
• Power Dissipation: 1.3 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 2.9 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLML6346TRPBFTR

IRLML6346TRPbF
10000
4
100
1000
0.1
10
100
1
10
0.2
Fig 7. Typical Source-Drain Diode
1
Fig 5. Typical Capacitance vs.
C rss
C oss
C iss
Drain-to-Source Voltage
V SD , Source-to-Drain Voltage (V)
V DS , Drain-to-Source Voltage (V)
0.4
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Forward Voltage
T J = 150°C
0.6
f = 1 MHZ
10
0.8
T J = 25°C
V GS = 0V
1.0
1.2
100
14.0
12.0
10.0
100
0.1
8.0
6.0
4.0
2.0
0.0
10
Fig 8. Maximum Safe Operating Area
1
0.1
0
I D = 3.4A
T A = 25°C
Tj = 150°C
Single Pulse
Fig 6. Typical Gate Charge vs.
1
V DS , Drain-to-Source Voltage (V)
V DS = 24V
V DS = 15V
V DS = 6.0V
Gate-to-Source Voltage
Q G , Total Gate Charge (nC)
2
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1.0
1msec
10msec
3
4
100µsec
5
10
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6
7
100
8