IRLML6346TRPBF International Rectifier, IRLML6346TRPBF Datasheet - Page 4
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IRLML6346TRPBF
Manufacturer Part Number
IRLML6346TRPBF
Description
MOSFET N-CH 30V 3.4A SOT23
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRLML6346TRPBF.pdf
(10 pages)
Specifications of IRLML6346TRPBF
Input Capacitance (ciss) @ Vds
270pF @ 24V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
63 mOhm @ 3.4A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3.4A
Vgs(th) (max) @ Id
1.1V @ 10µA
Gate Charge (qg) @ Vgs
2.9nc @ 4.5V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
63 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
3.4 A
Power Dissipation
1.3 W
Mounting Style
SMD/SMT
Gate Charge Qg
2.9 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRLML6346TRPBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLML6346TRPBF
Manufacturer:
IR
Quantity:
20 000
IRLML6346TRPbF
10000
4
100
1000
0.1
10
100
1
10
0.2
Fig 7. Typical Source-Drain Diode
1
Fig 5. Typical Capacitance vs.
C rss
C oss
C iss
Drain-to-Source Voltage
V SD , Source-to-Drain Voltage (V)
V DS , Drain-to-Source Voltage (V)
0.4
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Forward Voltage
T J = 150°C
0.6
f = 1 MHZ
10
0.8
T J = 25°C
V GS = 0V
1.0
1.2
100
14.0
12.0
10.0
100
0.1
8.0
6.0
4.0
2.0
0.0
10
Fig 8. Maximum Safe Operating Area
1
0.1
0
I D = 3.4A
T A = 25°C
Tj = 150°C
Single Pulse
Fig 6. Typical Gate Charge vs.
1
V DS , Drain-to-Source Voltage (V)
V DS = 24V
V DS = 15V
V DS = 6.0V
Gate-to-Source Voltage
Q G , Total Gate Charge (nC)
2
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1.0
1msec
10msec
3
4
100µsec
5
10
www.irf.com
6
7
100
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