FDD850N10L Fairchild Semiconductor, FDD850N10L Datasheet - Page 2

• Manufacturer Part Number: FDD850N10L
• Description: MOSFET N-CH 100V 15.7A DPAK-3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD850N10L

• Input Capacitance (ciss) @ Vds: 1465pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 75 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 15.7A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 28.9nC @ 10V
• Power - Max: 50W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 64 mOhms
• Forward Transconductance Gfs (max / Min): 31 S
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 15.7 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDD850N10L Rev. A5
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1mH, I
3. I
4. Pulse Test: Pulse width ≤ 300μs, Dual Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
BV
ΔBV
I
I
V
R
g
C
C
C
Q
Q
Q
Q
t
t
t
t
ESR
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
ΔT
FS
GS(th)
SD
DS(on)
iss
oss
rss
g(tot)
g(tot)
gs
gd
rr
SD
Device Marking
DSS
Symbol
J
FDD850N10L
DSS
≤ 15.7A, di/dt ≤ 200A/μs, V
AS
= 9.1A, R
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Equivalent Series Resistance (G-S)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
G
= 25Ω, Starting T
DD
FDD850N10L
≤ BV
Device
DSS
Parameter
J
, Starting T
= 25°C
T
J
C
= 25°C
= 25
o
C unless otherwise noted
Package
D-PAK
I
I
V
V
V
V
V
dI
V
V
V
V
V
f = 1MHz
V
V
V
V
D
D
DS
DS
GS
DD
GS
GS
GS
GS
GS
GS
DS
DS
GS
GS
F
= 250μA, V
= 250μA, Referenced to 25
/dt = 100A/μs
= 80V, V
= 80V, T
= 0V, I
= ±20V, V
= 10V, I
= 25V, V
= 50V, I
= 5V, R
= 0V, V
= V
= 10V, I
= 5V, I
= 10V
= 5V
DS
Test Conditions
, I
SD
2
D
D
DS
D
GEN
Reel Size
D
D
= 12A
C
GS
GS
GS
380mm
= 15.7A
= 12A
= 12A
= 15.7A
= 250μA
DS
= 150
= 80V, I
= 0V
= 0V
= 4.7Ω
= 0V
= 0V
o
C
V
I
D
SD
DS
= 15.7A
= 15.7A
= 80V
(Note 4, 5)
o
(Note 4)
(Note 4)
C
Tape Width
16mm
Min.
100
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1100
Typ.
22.2
12.3
1.75
0.1
3.0
5.7
38
50
61
64
31
80
42
17
21
27
-
-
-
-
-
-
-
8
-
Quantity
www.fairchildsemi.com
Max.
±100
1465
28.9
16.0
15.7
500
105
2500
1.3
2.5
63
75
96
44
52
64
26
1
-
-
-
-
-
-
-
-
-
Units
V/
mΩ
mΩ
nC
nC
nC
nC
pF
pF
pF
μA
nA
nC
ns
ns
ns
ns
ns
Ω
V
V
S
A
A
V
o
C