FDMC6679AZ Fairchild Semiconductor, FDMC6679AZ Datasheet - Page 5

• Manufacturer Part Number: FDMC6679AZ
• Description: MOSFET P-CH 30V POWER33
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC6679AZ

• Input Capacitance (ciss) @ Vds: 3970pF @ 15V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 11.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 91nC @ 10V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, Power33
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
FDMC6679AZ Rev.D1
Typical Characteristics
0.001
1000
0.01
100
0.1
0.3
10
1
10
2
1
10
-3
-3
V
SINGLE PULSE
R
T
GS
SINGLE PULSE
R
A
DUTY CYCLE-DESCENDING ORDER
D = 0.5
θ
JA
θ
= 25
JA
= -10 V
= 125
0.2
0.1
0.05
0.02
0.01
= 125
o
C
Figure 14.
o
o
C/W
C/W
10
10
-2
-2
Figure 13.
T
Junction-to-Ambient Transient Thermal Response Curve
J
= 25 °C unless otherwise noted
Single Pulse Maximum Power Dissipation
10
10
-1
-1
t, RECTANGULAR PULSE DURATION (sec)
t, PULSE WIDTH (sec)
5
1
1
10
NOTES:
DUTY FACTOR: D = t
PEAK T
10
J
= P
DM
x Z
P
θJA
DM
1
/t
100
x R
100
2
θJA
t
1
+ T
t
2
A
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1000
1000