FDT86106LZ Fairchild Semiconductor, FDT86106LZ Datasheet

MOSFET N-CH 100V 3.2A SOT-223

FDT86106LZ

Manufacturer Part Number
FDT86106LZ
Description
MOSFET N-CH 100V 3.2A SOT-223
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDT86106LZ

Input Capacitance (ciss) @ Vds
315pF @ 50V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
108 mOhm @ 3.2A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
3.2A
Vgs(th) (max) @ Id
2.2V @ 250µA
Gate Charge (qg) @ Vgs
7nC @ 10V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
108 mOhms
Forward Transconductance Gfs (max / Min)
8 S
Drain-source Breakdown Voltage
100 V
Continuous Drain Current
3.2 A
Power Dissipation
2.2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDT86106LZ
Manufacturer:
Fairchild
Quantity:
74 811
Part Number:
FDT86106LZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2010 Fairchild Semiconductor Corporation
FDT86106LZ Rev.C
FDT86106LZ
N-Channel PowerTrench
100 V, 3.2 A, 108 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
DS
GS
AS
D
J
θJC
θJA
Max r
Max r
High performance trench technology for extremely low r
High power and current handling capability in a widely used
surface mount package
HBM ESD protection level > 3 KV typical (Note 4)
100% UIL tested
RoHS Compliant
, T
Symbol
Device Marking
STG
DS(on)
DS(on)
86106LZ
= 108 mΩ at V
= 153 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
SOT-223
D
GS
GS
FDT86106LZ
= 10 V, I
= 4.5 V, I
-Pulsed
Device
G
D
D
= 3.2 A
= 2.7 A
D
T
®
C
= 25 °C unless otherwise noted
MOSFET
S
Parameter
DS(on)
Package
SOT-223
1
T
T
General Description
This N-Channel logic Level MOSFETs are produced using
Fairchild Semiconductor‘s advanced Power Trench
that has been special tailored to minimize the on-state resistance
and yet maintain superior switching performance.
has been added to enhance ESD voltage level.
Application
A
A
= 25 °C
= 25 °C
DC - DC Conversion
Reel Size
13 ’’
(Note 1b)
(Note 1a)
(Note 1a)
(Note 3)
Tape Width
12 mm
-55 to +150
Ratings
100
±20
3.2
2.2
1.0
12
12
12
55
December 2010
www.fairchildsemi.com
2500 units
Quantity
®
G-S zener
process
Units
°C/W
mJ
°C
W
V
V
A

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FDT86106LZ Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 86106LZ FDT86106LZ ©2010 Fairchild Semiconductor Corporation FDT86106LZ Rev.C ® MOSFET General Description This N-Channel logic Level MOSFETs are produced using = 3 Fairchild Semiconductor‘s advanced Power Trench = 2 that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance ...

Page 2

... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° 3. Starting mH The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. FDT86106LZ Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 °C ...

Page 3

... JUNCTION TEMPERATURE ( T J Figure 3. Normalized On- Resistance vs Junction Temperature 12 PULSE DURATION = 80 μ s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDT86106LZ Rev °C unless otherwise noted 3 μ 100 125 150 - 0.001 ...

Page 4

... 125 0.01 0 TIME IN AVALANCHE (ms) AV Figure 9. Unclamped Inductive Switching Capability Limited by package C/W θ CASE TEMPERATURE ( T C Figure 11. Maximum Continuous Drain Current vs Case Temperature FDT86106LZ Rev °C unless otherwise noted 100 Figure 10 100 125 150 400 100 MHz 0 DRAIN TO SOURCE VOLTAGE (V) DS Figure 8 ...

Page 5

... Figure 13. 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 14. Junction-to-Ambient Transient Thermal Response Curve FDT86106LZ Rev °C unless otherwise noted PULSE WIDTH (sec) Single Pulse Maximum Power Dissipation SINGLE PULSE 118 C/W θ RECTANGULAR PULSE DURATION (sec) ...

Page 6

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDT86106LZ Rev.C ® PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...

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