FDMC8622 Fairchild Semiconductor, FDMC8622 Datasheet - Page 3

MOSFET N-CH 100V 4A POWER33

FDMC8622

Manufacturer Part Number
FDMC8622
Description
MOSFET N-CH 100V 4A POWER33
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMC8622

Input Capacitance (ciss) @ Vds
402pF @ 50V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
56 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
4A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
7.3nC @ 10V
Power - Max
2.5W
Mounting Type
*
Package / Case
*
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
56 mOhms
Forward Transconductance Gfs (max / Min)
8.9 S
Drain-source Breakdown Voltage
100 V
Continuous Drain Current
16 A
Power Dissipation
31 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2010 Fairchild Semiconductor Corporation
FDMC8622 Rev.C
Typical Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
30
25
20
15
10
30
25
20
15
10
Figure 3. Normalized On- Resistance
5
0
5
0
Figure 1.
-75
0
0
Figure 5. Transfer Characteristics
V
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
I
D
V
GS
DS
= 4 A
-50
= 10 V
vs Junction Temperature
= 5 V
V
GS
V
V
T
= 10 V
-25
GS
DS
On-Region Characteristics
J
,
1
, GATE TO SOURCE VOLTAGE (V)
,
JUNCTION TEMPERATURE (
DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
3
0
T
J
= 150
25
μ
s
2
o
C
50
T
T
J
J
= 25°C unless otherwise noted
T
= -55
J
75
= 25
6
μ
o
C
s
o
3
o
100 125 150
C
C )
V
GS
V
V
V
GS
GS
GS
= 6.5 V
= 7 V
= 6 V
= 5 V
4
9
3
0.1
40
10
0.5
0.4
0.3
0.2
0.1
0.0
1
4
3
2
1
0
0.4
Figure 2.
Figure 4.
Forward Voltage vs Source Current
2
0
vs Drain Current and Gate Voltage
Figure 6.
T
V
J
GS
V
= 150
GS
= 0 V
V
SD
= 5 V
, BODY DIODE FORWARD VOLTAGE (V)
o
C
Normalized On-Resistance
V
On-Resistance vs Gate to
0.6
GS
I
Source Voltage
4
5
D
Source to Drain Diode
,
,
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT(A)
T
J
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
= 25
o
C
0.8
10
6
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
I
D
T
V
= 4 A
J
T
GS
= 125
J
= -55
= 7 V
V
GS
T
o
J
C
o
1.0
= 6 V
= 25
C
15
8
μ
s
www.fairchildsemi.com
o
V
V
C
GS
GS
= 10 V
= 6.5 V
μ
s
1.2
10
20

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