FDMS86322 Fairchild Semiconductor, FDMS86322 Datasheet

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FDMS86322

Manufacturer Part Number
FDMS86322
Description
MOSFET N-CH 80V 60A LL POWER56
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMS86322

Input Capacitance (ciss) @ Vds
3000pF @ 50V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7.65 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
55nC @ 10V
Power - Max
2.5W
Mounting Type
*
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS86322
Manufacturer:
VISHAY
Quantity:
1 000
Part Number:
FDMS86322
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDMS86322
Quantity:
4 500
©2010 Fairchild Semiconductor Corporation
FDMS86322 Rev C
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMS86322
N-Channel PowerTrench
80 V, 60 A, 7.65 m:
Features
„ Max r
„ Max r
„ Advanced Package and Silicon combination for low r
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
V
V
I
E
P
T
R
R
D
J
DS
GS
AS
D
TJC
TJA
and high efficiency
, T
Symbol
Device Marking
STG
FDMS86322
DS(on)
DS(on)
= 7.65 m: at V
= 12 m: at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Top
GS
GS
= 6 V, I
FDMS86322
-Continuous
-Continuous (Silicon limited)
-Pulsed
= 10 V, I
Power 56
Device
D
= 7.2 A
D
= 13 A
T
®
D
A
= 25 °C unless otherwise noted
D
MOSFET
Parameter
D
D
Bottom
Power 56
Package
DS(on)
S
1
S
T
T
T
T
T
General Description
This
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
„ DC-DC Conversion
C
C
A
C
A
S
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
Pin 1
G
N-Channel
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
D
D
D
D
(Note 3)
MOSFET
8
5
6
7
Tape Width
12 mm
is
-55 to +150
Ratings
produced using Fairchild
±20
200
135
104
2.5
1.2
80
60
83
13
50
®
process thant has
October 2010
www.fairchildsemi.com
4
3
2
1
3000 units
Quantity
G
S
S
S
Units
°C/W
mJ
°C
W
V
V
A

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FDMS86322 Summary of contents

Page 1

... TJC R Thermal Resistance, Junction to Ambient TJA Package Marking and Ordering Information Device Marking Device FDMS86322 FDMS86322 ©2010 Fairchild Semiconductor Corporation FDMS86322 Rev C ® MOSFET General Description This N-Channel = Semiconductor‘s advanced Power Trench = 7.2 A been especially tailored to minimize the on-state resistance and D yet maintain superior switching performance ...

Page 2

... Q Reverse Recovery Charge rr Notes determined with the device mounted on a 1in TJA the user's board design. 2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%. ° 3. Starting 0.3 mH FDMS86322 Rev °C unless otherwise noted J Test Conditions = 250 PA 250 PA, referenced to 25 ° ± ...

Page 3

... Figure 3. Normalized On Resistance vs Junction Temperature 200 P PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 100 T = 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDMS86322 Rev °C unless otherwise noted J P PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 5 4 100 125 150 ...

Page 4

... Unclamped Inductive Switching Capability 300 100 10 1 THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE T = MAX RATED 0 125 C 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area FDMS86322 Rev °C unless otherwise noted J 10000 1000 DD 100 100 125 100 2000 ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.0005 - Figure 13. FDMS86322 Rev °C unless otherwise noted 125 C RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK TJA TJA J DM ...

Page 6

... Dimensional Outline and Pad Layout FDMS86322 Rev C 6 www.fairchildsemi.com ...

Page 7

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDMS86322 Rev.C F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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