FCH25N60N Fairchild Semiconductor, FCH25N60N Datasheet - Page 2

• Manufacturer Part Number: FCH25N60N
• Description: MOSFET N-CH 600V 25A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: SupreMOS™r

Specifications of FCH25N60N

• Input Capacitance (ciss) @ Vds: 3352pF @ 100V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 126 mOhm @ 12.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 74nC @ 10V
• Power - Max: 216W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.108 Ohms
• Drain-source Breakdown Voltage: 600 V
• Continuous Drain Current: 25 A
• Power Dissipation: 216 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FCH25N60N Rev. A2
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
3. I
4. Essentially Independent of Operating Temperature Typical Characteristics
BV
ΔBV
I
I
V
R
g
C
C
C
C
C
Q
Q
Q
ESR
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
ΔT
FS
GS(th)
DS(on)
iss
oss
rss
oss
oss
SD
g(tot)
gs
gd
rr
AS
SD
Device Marking
Symbol
DSS
J
= 8.3A, R
≤ 25A, di/dt ≤ 200A/μs, V
DSS
eff.
FCH25N60N
G
= 25Ω, Starting T
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
≤ 380V, Starting T
J
= 25°C
FCH25N60N
Device
Parameter
J
= 25°C
Package
TO247
I
I
V
V
V
V
V
dI
V
V
V
V
V
V
R
V
f = 1MHz
V
V
Drain Open, f=1MHz
D
D
DS
DS
GS
DD
GS
GS
GS
GS
DS
DS
DS
DS
DS
GS
G
F
= 1mA, V
= 1mA, Referenced to 25
/dt = 100A/μs
= 4.7Ω
= 480V, V
= 480V, T
= ±30V, V
= 0V, I
= 0V, I
= V
= 10V, I
= 20V, I
= 100V, V
= 380V, V
= 0V to 480V, V
= 380V, I
= 10V
= 380V, I
DS
T
Test Conditions
C
, I
2
SD
SD
GS
D
Reel Size
D
= 25
D
D
D
= 12.5A
= 12.5A
= 12.5A
GS
J
= 12.5A
DS
= 250μA
GS
GS
= 0V,T
= 12.5A
= 125
= 12.5A,
o
-
= 0V
= 0V
= 0V
= 0V, f = 1MHz
C unless otherwise noted
GS
o
J
C
= 25
= 0V
o
o
C
C
(Note 4)
(Note 4)
Tape Width
-
Min.
600
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.108
2520
Typ.
0.74
370
103
262
3.2
21
22
68
55
57
10
18
5
7
1
-
-
-
-
-
-
-
-
www.fairchildsemi.com
Quantity
Max.
0.126
±100
3352
146
100
137
4.0
1.2
10
74
52
54
20
25
75
5
30
-
-
-
-
-
-
-
-
-
-
Units
V/
nC
nC
nC
μA
nA
pF
pF
pF
pF
pF
ns
ns
ns
ns
ns
μC
Ω
Ω
V
V
S
A
A
V
o
C