IRLHS6242TRPBF International Rectifier, IRLHS6242TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRLHS6242TRPBF
• Description: MOSFET N-CH 20V 10A PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLHS6242TRPBF

• Input Capacitance (ciss) @ Vds: 1110pF @ 10V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11.7 mOhm @ 8.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1.1V @ 10µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Power - Max: 1.98W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11.7 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 22 A
• Power Dissipation: 9.6 W
• Gate Charge Qg: 14 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant


‚
ƒ
„
…
†
‡
IRLHS6242PbF
BV
ΔΒV
R
V
ΔV
I
I
gfs
Q
Q
Q
R
t
t
t
t
C
C
C
I
I
V
t
Q
t
Static @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
Thermal Resistance
R
R
R
R
GS(th)
SD
DS(on)
G
iss
oss
rss
g
gs
gd
rr
R
θJC
θJC
θJA
θJA
Repetitive rating; pulse width limited by max. junction temperature.
Package is limited to 12A by die-source to lead-frame bonding technology.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 ich square copper board.
For DESIGN AID ONLY, not subject to production testing.
Calculated continuous current based on maximum allowable junction temperature.
GS(th)
DSS
2
θ
DSS
is measured at
(Bottom)
(Top)
(<10s)
/ΔT
J
J
= 25°C (unless otherwise specified)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Parameter
Ù
Parameter
f
f
Parameter
Time is dominated by parasitic Inductance
Min.
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.5
20
36
Typ. Max. Units
Typ. Max. Units
1110
12.4
–––
-4.2
–––
–––
–––
–––
–––
260
180
–––
–––
–––
6.8
9.4
0.8
1.5
6.3
2.1
5.8
14
15
19
13
15
12
-100
11.7
15.5
–––
–––
–––
150
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.1
1.0
1.2
22
88
23
18
mV/°C
mV/°C
mΩ
μA
nA
nC
nC
ns
pF
ns
Ω
V
V
S
A
V
Typ.
–––
–––
–––
–––
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
I
V
ID = 8.5A
R
See Fig.15
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 210A/μs
D
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
G
GS
DS
= 8.5A
=1.8Ω
= 25°C, I
= 25°C, I
= V
= 16V, V
= 16V, V
= 10V, I
= 10V
= 10V
= 0V, I
= 4.5V, I
= 2.5V, I
= 12V
= -12V
= 4.5V
= 10V, V
= 0V
GS
d
dÃ
, I
D
(See Fig.17 & 18)
D
S
F
D
Max.
= 250μA
D
D
GS
GS
GS
Conditions
Conditions
= 10μA
= 8.5A
= 8.5A
13
94
63
46
= 8.5A
= 8.5A
= 8.5A
= 0V
= 0V, T
= 4.5V
eÃ
d
d
D
d
ed
ed
= 1mA
, V
, V
www.irf.com
J
e
= 125°C
DD
GS
G
= 10V
= 0V
Units
°C/W
e
D
S