AUIRF7640S2TR International Rectifier, AUIRF7640S2TR Datasheet - Page 2

• Manufacturer Part Number: AUIRF7640S2TR
• Description: MOSFET N-CH 60V 77A DIRECTFET-S2
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF7640S2TR

• Input Capacitance (ciss) @ Vds: 450pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 36 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 77A
• Vgs(th) (max) @ Id: 5V @ 25µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Power - Max: 2.4W
• Mounting Type: *
• Package / Case: *
• Configuration: Single Quad Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 36 mOhms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.8 A
• Power Dissipation: 2.4 W
• Gate Charge Qg: 7.3 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ƒ Surface mounted on 1 in. square Cu
Notes  through Š are on page 3
Static @ T
BV
ΔΒV
R
V
ΔV
gfs
R
I
I
Dynamic Characteristics @ T
Q
Q
Q
t
t
t
t
C
C
C
C
C
Diode Characteristics @ T
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
(still air).
GS(th)
SD
DS(on)
G
Q
Q
Q
Q
iss
oss
rss
oss
oss
g
sw
oss
rr
2
GS(th)
DSS
gs1
gs2
gd
godr
DSS
/ΔT
/ΔT
J
J
J
= 25°C (unless otherwise specified)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
g
J
gs2
= 25°C (unless otherwise stated)
+ Q
J
= 25°C (unless otherwise stated)
gd
)
‰
clip heatsink (still air)
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
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–––
–––
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–––
–––
–––
–––
–––
–––
–––
–––
3.0
9.3
–––
60
–––
–––
–––
–––
–––
–––
450
160
610
120
–––
–––
–––
0.1
-11
4.0
3.5
7.3
1.5
0.9
3.0
1.9
3.9
5.3
4.0
6.3
6.2
27
12
48
26
24
with small
-100
–––
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
5.0
5.0
1.3
36
11
21
84
39
36
5
mV/°C
V/°C
mΩ
μA
nA
nC
nC
pF
nC
ns
ns
V
V
S
Ω
A
V
board with metalized back and with small
clip heatsink (still air)
‰ Mounted on minimum footprint full size
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
See Fig. 6 and 17
V
V
I
R
V
V
ƒ = 1.0MHz
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/μs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DS
DD
G
GS
DS
GS
GS
= 13A
= 13A
=6.8Ω
= 25°C, I
= 25°C, I
= 0V, I
= 10V, I
= V
= 50V, I
= 60V, V
= 48V, V
= 20V
= -20V
= 30V
= 10V
= 16V, V
= 30V, V
= 0V
= 25V
= 0V, V
= 0V, V
GS
, I
D
Conditions
D
Conditions
S
F
DS
DS
D
D
= 250μA
GS
GS
GS
GS
= 13A, V
= 13A, V
= 25μA
= 13A
= 13A
= 1.0V, f=1.0MHz
= 48V, f=1.0MHz
= 0V
= 0V, T
= 0V
= 10V
i
i
D
www.irf.com
DD
GS
= 1mA
J
i
= 125°C
= 25V
= 0V
G
i
D
S