AUIRF7665S2TR International Rectifier, AUIRF7665S2TR Datasheet

AUIRF7665S2TR

Manufacturer Part Number

AUIRF7665S2TR

Description

MOSFET N-CH 100V 77A DIRECTFET2

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.AUIRF7665S2TR.pdf (11 pages)

Specifications of AUIRF7665S2TR

Input Capacitance (ciss) @ Vds

515pF @ 25V

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

62 mOhm @ 8.9A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

77A

Vgs(th) (max) @ Id

5V @ 25µA

Gate Charge (qg) @ Vgs

13nC @ 10V

Power - Max

2.4W

Mounting Type

Package / Case

Configuration

Single Quad Drain

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

62 mOhms

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

4.1 A

Power Dissipation

2.4 W

Gate Charge Qg

8.3 nC

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Description

The AUIRF7665S2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET packaging

platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compatible with

existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering

techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package

allows dual sided cooling to maximize thermal transfer in automotive power systems.

This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D

audio amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET packaging platform offers low parasitic

inductance and resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the

voltage ringing that accompanies current transients.

These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems.

Applicable DirectFET Outline and Substrate Outline

HEXFET

Absolute Maximum Ratings

Thermal Resistance

STG

AS(tested)

θJA

θJ-Can

θJ-PCB

@ T

Advanced Process Technology

Optimized for Class D Audio Amplifier Applications

Low Rds(on) for Improved Efficiency

Low Qg for Better THD and Improved Efficiency

Low Qrr for Better THD and Lower EMI

Low Parasitic Inductance for Reduced Ringing and Lower EMI

Delivers up to 100W per Channel into 8W with No Heatsink

Dual Sided Cooling

175°C Operating Temperature

Repetitive Avalanche Capability for Robustness and Reliability

Lead free, RoHS and Halogen free

= 25°C

= 100°C

= 25°C

is a registered trademark of International Rectifier.

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy (Tested Value)

Avalanche Current

Repetitive Avalanche Energy

Peak Soldering Temperature

Operating Junction and

Storage Temperature Range

Junction-to-Ambient

Junction-to-Can

Junction-to-PCB Mounted

Linear Derating Factor

Parameter

AUTOMOTIVE GRADE

@ 10V

@ 10V (Package Limited)

(Silicon Limited)

Typ.

See Fig. 18a,18b,16,17

12.5

–––

1.4

DirectFET™ Power MOSFET ‚

AUIRF7665S2TR1

(BR)DSS

DS(on)

G (typical)

g (typical)

AUIRF7665S2TR

-55 to + 175

Max.

± 20

14.4

10.2

100

270

4.1

2.4

0.2

typ.

max.

Max.

–––

5.0

DirectFET™ ISOMETRIC

PD - 96286B

51mΩ

62mΩ

8.3nC

100V

3.5Ω

Units

°C/W

W/°C

°C

09/03/10

Related parts for AUIRF7665S2TR

AUIRF7665S2TR Summary of contents

Page 1

... Limited 10V (Silicon Limited 10V (Silicon Limited 10V (Package Limited Ã Parameter 96286B AUIRF7665S2TR AUIRF7665S2TR1 DirectFET™ Power MOSFET ‚ V 100V (BR)DSS R typ. 51mΩ DS(on) max. 62mΩ R 3.5Ω G (typical) Q 8.3nC g (typical) DirectFET™ ISOMETRIC Max. Units 100 V ± ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

... Machine Model Human Body Model ESD Charged Device Model RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: †† Exceptions to AEC-Q101 requirements are noted in the qualification report. www.irf.com Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. ...

Page 4

VGS TOP 15V 10V 8.0V 10 7.0V 6.5V 6.0V 5.5V BOTTOM 5.0V 1 0.1 0.01 5.0V ≤ 60µs PULSE WIDTH Tj = 25°C 0.001 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 140 120 ...

Page 5

25µ 250µ 1.0mA 2 1.0A 1.5 -75 -50 - 100 125 150 175 Temperature ( °C ) Fig 7. Typical ...

Page 6

OPERATION IN THIS AREA LIMITED (on) 100 10 100µsec 1msec 10msec 25°C 0 175°C Single Pulse 0. 100 Drain-to-Source Voltage (V) Fig 13. Maximum ...

Page 7

TOP Single Pulse BOTTOM 1.0% Duty Cycle 8. 100 Starting Junction Temperature (°C) Fig 17. Maximum Avalanche Energy Vs. Temperature L V ...

Page 8

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations GATE D = DRAIN S = SOURCE D D www.irf.com ...

Page 9

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations ™ Part Marking www.irf.com 9 ...

Page 10

Tape & Reel Dimension (Showing component orientation). 10 www.irf.com ...

Page 11

... Repetitive rating; pulse width limited by max. junction temperature. Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’ ...

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