AUIRF7665S2TR1 International Rectifier, AUIRF7665S2TR1 Datasheet - Page 2

• Manufacturer Part Number: AUIRF7665S2TR1
• Description: MOSFET N-CH 100V 77A DIRECTFET2
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF7665S2TR1

• Input Capacitance (ciss) @ Vds: 515pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 62 mOhm @ 8.9A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 77A
• Vgs(th) (max) @ Id: 5V @ 25µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Power - Max: 2.4W
• Mounting Type: *
• Package / Case: *
• Configuration: Single Quad Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 62 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.1 A
• Power Dissipation: 2.4 W
• Gate Charge Qg: 8.3 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ƒ Surface mounted on 1 in. square Cu
Notes  through Š are on page 11
V
∆V
R
V
∆V
gfs
R
I
I
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
Static @ T
Dynamic @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
(still air).
(BR)DSS
DS(on)
GS(th)
G(int)
iss
oss
rss
oss
oss
oss
SD
g
sw
oss
rr
Q
Q
Q
Q
2
(BR)DSS
GS(th)
gs1
gs2
gd
godr
eff.
/∆T
/∆T
J
J
J
= 25°C (unless otherwise specified)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Internal Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
J
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
g
gs2
+ Q
gd
)
‰
clip heatsink (still air)
Min.
Min.
Min.
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.0
8.8
Typ.
Typ.
Typ.
0.10
0.77
–––
–––
–––
–––
–––
–––
515
110
530
115
–––
–––
–––
-13
4.0
3.5
8.3
1.9
3.2
2.4
4.0
4.7
3.8
6.4
7.1
3.6
51
30
70
33
38
with small
Max.
Max.
Max.
-100
14.4
–––
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
5.0
5.0
1.3
62
13
58
5
mV/°C
board with metalized back and with small
clip heatsink (still air)
Units
Units
Units
‰ Mounted on minimum footprint full size
V/°C
mΩ
nC
nC
µA
nA
nC
pF
ns
ns
Ω
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
See Fig. 11
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DS
DD
GS
GS
DS
GS
GS
GS
J
J
G
= 8.9A
= 8.9A
= 25°C, I
= 25°C, I
= 6.8Ω
= 0V, I
= 10V, I
= V
= 25V, I
= 100V, V
= 80V, V
= 20V
= -20V
= 50V
= 10V
= 16V, V
= 50V
= 10V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
i
D
DS
S
F
D
D
Conditions
Conditions
DS
DS
Conditions
= 250µA
GS
GS
= 25µA
= 8.9A, V
= 8.9A
= 8.9A, V
= 8.9A
GS
= 0V to 80V
= 1.0V, ƒ = 1.0MHz
= 80V, ƒ = 1.0MHz
= 0V, T
= 0V
i
= 0V
D
i
www.irf.com
= 1mA
J
GS
DD
= 125°C
= 25V
= 0V
i