AUIRFR3504ZTRL International Rectifier, AUIRFR3504ZTRL Datasheet - Page 2

• Manufacturer Part Number: AUIRFR3504ZTRL
• Description: MOSFET N-CH 40V 42A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFR3504ZTRL

• Input Capacitance (ciss) @ Vds: 1510pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 mOhm @ 42A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

V
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
I
I
V
t
Q
t
Static Electrical Characteristics @ T
Dynamic Electrical Characteristics @ T
Diode Characteristics
Notes:

‚
ƒ
„
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
V
D
S
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
oss
oss
oss
2
g
gs
gd
rr
(BR)DSS
Repetitive rating; pulse width limited by
Limited by T
R
Pulse width
C
charging time as C
80% V
max. junction temperature. (See fig. 11).
recommended for use above this value.
eff.
G
oss
= 25 , I
eff. is a fixed capacitance that gives the same
/ T
DSS
J
.
AS
Jmax
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 42A, V
1.0ms; duty cycle
, starting T
Parameter
oss
while V
GS
=10V. Part not
Parameter
Parameter
J
™
= 25°C, L = 0.09mH,
DS
is rising from 0 to
2%.
J
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
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–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
40
32
…
†
‡
ˆ
R is measured at TJ approximately 90°C.
Limited by T
This value determined from sample failure population,
starting T
When mounted on 1" square PCB (FR-4 or G-10 Material) .
application note #AN-994.
avalanche performance.
For recommended footprint and soldering techniques refer to
0.032
1510
1100
8.23
–––
–––
–––
–––
–––
–––
–––
340
190
340
460
–––
–––
–––
9.6
4.5
7.5
9.2
30
12
15
74
30
38
18
-200
J
–––
–––
–––
250
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
310
9.0
4.0
1.3
20
45
42
27
14
= 25°C, L = 0.09mH, R
Jmax
V/°C
m
, see Fig.12a, 12b, 15, 16 for typical repetitive
µA
nA
nC
nH
pF
nC
ns
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 42A
= 42A
= 25°C, I
= 25°C, I
= 15
= V
= 10V, I
= 40V, V
= 40V, V
= 32V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 20V
= 10V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
G
e
e
D
Conditions
Conditions
Conditions
D
DS
S
F
= 25 , I
D
D
DS
DS
= 250µA
GS
GS
= 250µA
= 42A, V
= 42A, V
= 42A
= 42A
= 0V to 32V
= 1.0V, ƒ = 1.0MHz
= 32V, ƒ = 1.0MHz
= 0V
= 0V, T
e
www.irf.com
AS
e
D
= 1mA
DD
GS
= 42A, V
J
= 125°C
= 20V
G
= 0V
f
e
GS
S
D
=10V.