AUIRFU4104 International Rectifier, AUIRFU4104 Datasheet - Page 4

• Manufacturer Part Number: AUIRFU4104
• Description: MOSFET N-CH 40V 42A IPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFU4104

• Input Capacitance (ciss) @ Vds: 2950pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 42A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 89nC @ 10V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 4.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: I-PAK
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 5.5 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 119 A
• Power Dissipation: 140 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 59 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
1000
1000
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
100
100
10
10
1
1
0.1
4
0
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
6
1
4.5V
1
60µs PULSE WIDTH
Tj = 25°C
T J = 25°C
V DS = 20V
60µs PULSE WIDTH
10
10
8
T J = 175°C
100
100
10
Fig 4. Typical Forward Transconductance
1000
Fig 2. Typical Output Characteristics
120
100
100
80
60
40
20
10
0
1
0.1
0
0
Vs. Drain Current
V DS , Drain-to-Source Voltage (V)
I D, Drain-to-Source Current (A)
20
1
1
40
4.5V
T J = 175°C
V DS = 10V
380µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 175°C
60
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T J = 25°C
10
10
80
100
100
100