AUIRFZ44Z International Rectifier, AUIRFZ44Z Datasheet - Page 4

• Manufacturer Part Number: AUIRFZ44Z
• Description: MOSFET N-CH 55V 51A TO220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFZ44Z

• Input Capacitance (ciss) @ Vds: 1420pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13.9 mOhm @ 31A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 51A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Power - Max: 80W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Continuous Drain Current Id: 51A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 0.0111ohm
• Rds(on) Test Voltage Vgs: 10V
• Transistor Case Style: TO-220AB
• No. Of Pins: 3
• Svhc: No SVHC (15-Dec-2010)
• Rohs Compliant: Yes
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13.9 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 51 A
• Power Dissipation: 80 W
• Mounting Style: Through Hole
• Gate Charge Qg: 29 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
1000
100
100
1.0
Fig 3. Typical Transfer Characteristics
10
10
Fig 1. Typical Output Characteristics
4
1
0.1
2
T J = 175°C
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1
T J = 25°C
4.5V
6
V DS = 15V
Tj = 25°C
60µs PULSE WIDTH
60µs PULSE WIDTH
8
10
10
100
12
60
50
40
30
20
10
0
1000
100
0
10
Fig 2. Typical Output Characteristics
1
0.1
TOP
BOTTOM
I D ,Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
10
V DS , Drain-to-Source Voltage (V)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
20
1
4.5V
vs. Drain Current
T J = 25°C
T J = 175°C
Tj = 175°C
30
60µs PULSE WIDTH
V DS = 10V
10
40
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50
100