STF5N62K3 STMicroelectronics, STF5N62K3 Datasheet

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STF5N62K3

Manufacturer Part Number
STF5N62K3
Description
MOSFET N-CH 620V 4.2A TO220FP
Manufacturer
STMicroelectronics
Series
SuperMESH3™r
Datasheet

Specifications of STF5N62K3

Input Capacitance (ciss) @ Vds
680pF @ 50V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.6 Ohm @ 2.1A, 10V
Drain To Source Voltage (vdss)
620V
Current - Continuous Drain (id) @ 25° C
4.2A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
26nC @ 10V
Power - Max
25W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Price
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Quantity:
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Features
Application
Switching applications
Description
These devices are made using the
SuperMESH3™ Power MOSFET technology that
is obtained via improvements applied to
STMicroelectronics’ SuperMESH™ technology
combined with a new optimized vertical structure.
The resulting product has an extremely low on
resistance, superior dynamic performance and
high avalanche capability, making it especially
suitable for the most demanding applications.
Table 1.
October 2010
Order codes
STB5N62K3
STD5N62K3
STP5N62K3
STU5N62K3
STF5N62K3
100% avalanche tested
Extremely large avalanche performance
Gate charge minimized
Very low intrinsic capacitance
Improved diode reverse recovery
characteristics
Zener-protected
N-channel 620 V, 1.28 Ω , 4.2 A SuperMESH3™ Power MOSFET
Order codes
STB5N62K3
STD5N62K3
STP5N62K3
STU5N62K3
STF5N62K3
Device summary
620 V
V
DSS
STB5N62K3, STD5N62K3, STF5N62K3
R
< 1.6 Ω
max.
DS(on)
Marking
5N62K3
4.2 A
D²PAK, DPAK,TO-220FP, TO-220 and IPAK
I
D
Doc ID 17361 Rev 2
70 W
25 W
70 W
P
w
STP5N62K3, STU5N62K3
Figure 1.
TO-220
Packages
TO-220FP
TO-220
D²PAK
DPAK
IPAK
G(1)
1
Internal schematic diagram
D²PAK
2
3
1
3
DPAK
D(2)
S(3)
1
3
Tape and reel
Tape and reel
IPAK
Packaging
Tube
Tube
Tube
TO-220FP
1
2
3
www.st.com
AM01476v1
1
1/19
2
3
19

Related parts for STF5N62K3

STF5N62K3 Summary of contents

Page 1

... STB5N62K3, STD5N62K3, STF5N62K3 N-channel 620 V, 1.28 Ω , 4.2 A SuperMESH3™ Power MOSFET Features R DS(on) Order codes V DSS max. STB5N62K3 STD5N62K3 < 1.6 Ω STF5N62K3 620 V STP5N62K3 STU5N62K3 ■ 100% avalanche tested ■ Extremely large avalanche performance ■ Gate charge minimized ■ Very low intrinsic capacitance ■ ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STB/D/F/P/U5N62K3 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain- source voltage DS V Gate- source voltage GS I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed) DM ...

Page 4

Electrical characteristics 2 Electrical characteristics (Tcase =25 °C unless otherwise specified) Table 4. On /off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate threshold voltage ...

Page 5

STB/D/F/P/U5N62K3 Table 6. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off-delay time d(off) t Fall time f Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) ...

Page 6

Electrical characteristics Electrical characteristics (curves) 2.1 Figure 2. Safe operating area for D²PAK, TO-220 0.1 0.01 0 Figure 4. Safe operating area for TO-220FP 0.1 0.01 10 0.1 ...

Page 7

STB/D/F/P/U5N62K3 Figure 8. Output characteristics =10V Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance =496V ...

Page 8

Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.10 1.00 0.90 0.80 0.70 -75 -25 25 Figure 16. Source-drain diode forward characteristics V SD (V) 1.0 0.9 0.8 T =25° 0.6 ...

Page 9

STB/D/F/P/U5N62K3 3 Test circuits Figure 19. Switching times test circuit for resistive load D.U. Figure 21. Test circuit for inductive load switching and diode recovery times ...

Page 10

Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available ...

Page 11

STB/D/F/P/U5N62K3 Table 9. TO-220FP mechanical data Dim Dia Figure 25. TO-220FP drawing A Min. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 ...

Page 12

Package mechanical data DIM 12/19 TO-252 (DPAK) mechanical data mm. ...

Page 13

STB/D/F/P/U5N62K3 DIM (L1 TO-251 (IPAK) mechanical data mm. min. typ 2.20 0.90 0.64 5.20 0.45 0.48 6.00 6.40 2.28 4.40 16.10 9.00 0.80 0.80 o ...

Page 14

Package mechanical data 14/19 TO-220 type A mechanical data Dim Min A 4.40 b 0.61 b1 1.14 c 0.48 D 15. 2.40 e1 4.95 F 1.23 H1 6. 3.50 L20 L30 ...

Page 15

STB/D/F/P/U5N62K3 Dim D²PAK (TO-263) mechanical data Min. 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 4.88 15 2.49 2.29 ...

Page 16

Package mechanical data 5 Package mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE MECHANICAL DATA mm DIM. MIN. A0 6 1.5 D1 1.5 E 1.65 F 7.4 K0 2.55 P0 3.9 P1 7.9 P2 ...

Page 17

STB/D/F/P/U5N62K3 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 B0 15.7 D 1.5 D1 1.59 E 1.65 F 11.4 K0 4.8 P0 3.9 P1 11 0.25 W 23.7 TAPE AND ...

Page 18

Revision history 6 Revision history Table 10. Document revision history Date 09-Apr-2010 20-Oct-2010 18/19 Revision 1 First release. – Added new package, mechanical data: IPAK; 2 – Added new package, mechanical data: D²PAK; – Document status promoted from preliminary data ...

Page 19

... STB/D/F/P/U5N62K3 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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