AUIRF1010EZ International Rectifier, AUIRF1010EZ Datasheet - Page 6

• Manufacturer Part Number: AUIRF1010EZ
• Description: MOSFET N-CH 60V 84A TO220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF1010EZ

• Input Capacitance (ciss) @ Vds: 2810pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 51A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 86nC @ 10V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 84A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 0.0068ohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 140W
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 8.5 mOhms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 84 A
• Power Dissipation: 140 W
• Mounting Style: Through Hole
• Gate Charge Qg: 58 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
100
0.001
90
80
70
60
50
40
30
20
10
0.01
0.1
0
10
1
1E-006
25
Fig 9. Maximum Drain Current vs.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
50
0.02
0.20
0.10
0.05
0.01
T C , Case Temperature (°C)
Case Temperature
75
SINGLE PULSE
( THERMAL RESPONSE )
Limited By Package
1E-005
100
125
150
t 1 , Rectangular Pulse Duration (sec)
0.0001
175
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci
2.5
2.0
1.5
1.0
0.5
Fig 10. Normalized On-Resistance
i/Ri
-60 -40 -20 0
R
0.001
1
R
I D = 84A
V GS = 10V
1
τ
2
τ
R
2
T J , Junction Temperature (°C)
2
R
vs. Temperature
2
R
τ
3
20 40 60 80 100 120 140 160 180
3
R
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
3
3
τ
C
τ
Ri (°C/W)
0.01
0.415
0.410
0.285
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0.000246
0.000898
0.009546
τi (sec)
0.1